Pulse output circuit, shift register, and display device

ABSTRACT

In a pulse output circuit in a shift register, a power source line which is connected to a transistor in an output portion connected to a pulse output circuit at the next stage is set to a low-potential drive voltage, and a power source line which is connected to a transistor in an output portion connected to a scan signal line is set to a variable potential drive voltage. The variable potential drive voltage is the low-potential drive voltage in a normal mode, and can be either a high-potential drive voltage or the low-potential drive voltage in a batch mode. In the batch mode, display scan signals can be output to a plurality of scan signal lines at the same timing in a batch.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application is a continuation of U.S. application Ser. No.17/073,634, filed Oct. 19, 2020, now allowed, which is a continuation ofU.S. application Ser. No. 15/393,389, filed Dec. 29, 2016, now U.S. Pat.No. 10,818,256, which is a continuation of U.S. application Ser. No.14/831,939, filed Aug. 21, 2015, now U.S. Pat. No. 9,543,039, which is acontinuation of U.S. application Ser. No. 13/111,064, filed May 19,2011, now U.S. Pat. No. 9,117,537, which claims the benefit of a foreignpriority application filed in Japan as Serial No. 2010-117615 on May 21,2010, all of which are incorporated by reference.

TECHNICAL FIELD

The present invention relates to a driver circuit (also referred to as apulse output circuit or a shift register). The present invention alsorelates to a display device including a driver circuit formed over thesame substrate as a pixel portion, and/or an electronic device havingthe display device.

BACKGROUND ART

With the widespread of large display devices such as liquid crystaltelevisions, products with higher-value-added have been demanded andthus under development. In particular, a technique to configure a drivercircuit such as a scan line driver circuit over the same substrate as apixel portion, using thin film transistors (TFTs) whose channel regionsare made of an amorphous semiconductor has been actively developedbecause the technique greatly contributes to reduction in cost andimprovement in reliability.

Further, reduction in power consumption of the display device is a largeobject. Patent Document 1 discloses an image display device having apartial display function, which is equipped with an output control blockwhich controls an output of an ON signal to a scan signal line such thatdisplay scan signals are output in a batch to a plurality of scan signallines for a non-display region, in response to a control signal forswitching the output of an ON signal to a scan signal line fromsequential output to batch output.

REFERENCE

Patent Document 1: Japanese Published Patent Application No. 2001-343928

DISCLOSURE OF INVENTION

In a display device, a gate line (scan line) is provided for each pixelline of a display panel in which a plurality of pixels is arranged in amatrix manner, and the display device is driven with the gate lines(scan lines) sequentially selected with a period of one horizontalperiod of a display scan signal, whereby a display image is renewed. Asa gate line driver circuit (scan line driver circuit) for performingsequential selection among the pixel lines, i.e., the gate lines (scanlines) in this manner, a shift register for performing a round of shiftoperation in one frame period of the display scan signal can be used.With such a shift register in the driver circuit, a count-up operationhas been performed per unit period to control an output signal. However,there has been a problem in that the number of output signals of thescan signal lines for all of the scan lines (signal lines) leads to along data writing period.

One object of one embodiment of the present invention is to provide adriver circuit and/or a display device which reduce(s) a flicker on ascreen of the display device, and ensure(s) a decrease of a data writingperiod and a reduction in power consumption.

One embodiment of the present invention is a pulse output circuit whichincludes a 1st transistor whose 1st electrode is electrically connectedto a 1st input terminal, whose 2nd electrode is electrically connectedto a 1st output terminal, and whose gate electrode is electricallyconnected to a 1st node; a 2nd transistor whose 1st electrode iselectrically connected to the 1st output terminal, whose 2nd electrodeis electrically connected to a 1st power source line, and whose gateelectrode is electrically connected to a 2nd node; a 3rd transistorwhose 1st electrode is electrically connected to the 1st input terminal,whose 2nd electrode is electrically connected to a 2nd output terminal,and whose gate electrode is electrically connected to the 1st node; a4th transistor whose 1st electrode is electrically connected to the 2ndoutput terminal, whose 2nd electrode is electrically connected to a 2ndpower source line, and whose gate electrode is electrically connected tothe 2nd node; and a control portion which controls the levels ofpotentials supplied to the 1st and 2nd nodes. A high-potential drivevoltage and a low-potential drive voltage are switched to be supplied tothe 2nd power source line.

One embodiment of the present invention is a pulse output circuit whichincludes 1st to 11th transistors, 1st to 5th input terminals, a 1stoutput terminal, and a 2nd output terminal and is electrically connectedto 1st to 6th power source lines. A 1st electrode of the 1st transistoris electrically connected to the 1st input terminal, a 2nd electrodethereof is electrically connected to a 1st electrode of the 2ndtransistor, and a gate electrode thereof is electrically connected to agate electrode of the 3rd transistor and a 1st electrode of the 7thtransistor. A 2nd electrode of the 2nd transistor is electricallyconnected to the 1st power source line, and a gate electrode thereof iselectrically connected to a gate electrode of the 4th transistor, a gateelectrode of the 6th transistor, a 2nd electrode of the 9th transistor,a 2nd electrode of the 10th transistor, and a 1st electrode of the 11thtransistor. A 1st electrode of the 3rd transistor is electricallyconnected to the 1st input terminal, and a 2nd electrode thereof iselectrically connected to the 2nd output terminal. A 1st electrode ofthe 4th transistor is electrically connected to the 2nd output terminal,and a 2nd electrode thereof is electrically connected to the 2nd powersource line. A 1st electrode of the 5th transistor is electricallyconnected to a 2nd electrode of the 7th transistor, a 2nd electrodethereof is electrically connected to the 3rd power source line, and agate electrode thereof is electrically connected to the 4th inputterminal. A 1st electrode of the 6th transistor is electricallyconnected to a 1st electrode of the 5th transistor, and a 2nd electrodethereof is electrically connected to the 1st power source line. A gateelectrode of the 7th transistor is electrically connected to the 4thpower source line. A 1st electrode of the 8th transistor is electricallyconnected to the 5th power source line, a 2nd electrode thereof iselectrically connected to a 1st electrode of the 9th transistor, and agate electrode thereof is electrically connected to the 2nd inputterminal. A gate electrode of the 9th transistor is electricallyconnected to the 3rd input terminal. A 1st electrode of the 10thtransistor is electrically connected to the 6th power source line, and agate electrode thereof is electrically connected to the 5th inputterminal. A 2nd electrode of the 11th transistor is electricallyconnected to the 1st power source line, and a gate electrode thereof iselectrically connected to the 4th input terminal. A high-potential drivevoltage and a low-potential drive voltage are switched to be supplied tothe 2nd power source line.

In one embodiment of the present invention, the potentials of the 3rdpower source line, the 4th power source line, the 5th power source line,and the 6th power source line in the pulse output circuit each may behigher than any of the potentials of the 1st power source line and the2nd power source line.

In one embodiment of the present invention, the 1st to 11th transistorsin the pulse output circuit may be n-channel transistors.

One embodiment of the present invention is a shift register whichincludes at least a (m−1)-th pulse output circuit, a m-th pulse outputcircuit, a (m+1)-th pulse output circuit, and a (m+2)-th pulse outputcircuit, where m≥2, and has 1st to 4th signal lines for outputting clocksignals. 1st to 3rd input terminals of the m-th pulse output circuit areelectrically connected to three signal lines among the 1st to 4th signallines, a 4th input terminal thereof is electrically connected to a 1stoutput terminal of the (m−1)-th pulse output circuit, a 5th inputterminal thereof is electrically connected to a 1st output terminal ofthe (m+2)-th pulse output circuit, and a 1st output terminal thereof iselectrically connected to a 4th input terminal of the (m+1)-th pulseoutput circuit.

In one embodiment of the present invention, the 1st to 4th signal linesin the shift register may output clock signals which are sequentiallydelayed by ¼ period.

According to one embodiment of the present invention, a driver circuitand/or a display device which reduce(s) a flicker on a screen of thedisplay device, and ensure(s) a decrease of a data writing period and areduction in power consumption can be provided.

BRIEF DESCRIPTION OF DRAWINGS

FIG. 1A is a diagram showing an example of a shift register, and FIGS.1B and 1C are diagrams showing an example of a pulse output circuit.

FIG. 2 is a diagram showing an example of a shift register and a pulseoutput circuit.

FIG. 3 is a diagram showing an example of a shift register and a pulseoutput circuit.

FIG. 4 is a chart showing an operation example of a pulse outputcircuit.

FIGS. 5A to 5D are comparison diagrams showing operation of a pulseoutput circuit.

FIG. 6A is a diagram showing an example of a shift register, and FIGS.6B and 6C are diagrams showing an example of a pulse output circuit.

FIG. 7 is a chart showing an operation example of a pulse outputcircuit.

FIGS. 8A and 8B are comparison diagrams showing operation of a pulseoutput circuit.

FIGS. 9A and 9B are comparison diagrams showing operation of a pulseoutput circuit.

FIGS. 10A to 10C are views illustrating embodiments of a display device.

FIG. 11 is a view illustrating one embodiment of a display device.

FIG. 12 is a view illustrating one embodiment of a display device.

FIG. 13 is a view illustrating one embodiment of a display device.

FIG. 14 is a view illustrating one embodiment of a display device.

FIGS. 15A and 15B are views illustrating electronic devices.

FIGS. 16A and 16B are views illustrating electronic devices.

FIGS. 17A and 17B are views illustrating electronic devices.

FIGS. 18A to 18D are diagrams illustrating embodiments of a transistorapplicable to a display device.

FIGS. 19A to 19E are diagrams illustrating one embodiment of a methodfor manufacturing a transistor applicable to a display device.

BEST MODE FOR CARRYING OUT THE INVENTION

Hereinafter, embodiments of the present invention will be described withreference to the accompanying drawings. However, the present inventioncan be carried out in many different modes, and it is easily understoodby those skilled in the art that modes and details of the presentinvention can be modified in various ways without departing from thepurpose and the scope of the present invention. Therefore, the presentinvention is not interpreted as being limited to the description of theembodiments below. Note that identical portions in the structures of thepresent invention that are described below are denoted by the samereference numerals throughout the drawings.

Further, in the drawings for the description below, in the case wheretransistors are indicated by solid lines and dotted lines, a transistorindicated by a solid line means the transistor being conducting (ON),whereas a transistor indicated by a dotted line means the transistorbeing non-conducting (OFF).

Embodiment 1

In Embodiment 1, an example of a pulse output circuit and an example ofa shift register including the pulse output circuit will be describedwith reference to FIGS. 1A to 1C.

A shift register described in this embodiment includes 1st to n-th pulseoutput circuits 10_₁ to 10__(n) (n≥2) and 1st to 4th signal lines 11 to14 for outputting clock signals (see FIG. 1A). The 1st signal line 11outputs a 1st clock signal CK1, the 2nd signal line 12 outputs a 2ndclock signal CK2, the 3rd signal line 13 outputs a 3rd clock signal CK3,and the 4th signal line 14 outputs a 4th clock signal CK4.

The clock signals CK are signals which alternate between an H-levelsignal and an L-level signal at regular intervals; in this embodiment,the 1st to 4th clock signals CK1 to CK4 are delayed by ¼ periodsequentially. In this embodiment, with the 1st to 4th clock signals CK1to CK4, control or the like of driving of a pulse output circuit isperformed.

Each of the 1st to n-th pulse output circuits 10_₁ to 10__(n) includes a1st input terminal 21, a 2nd input terminal 22, a 3rd input terminal 23,a 4th input terminal 24, a 1st output terminal 25, a 5th input terminal26, and a 2nd output terminal 27 (see FIG. 1B).

The 1st input terminal 21, the 2nd input terminal 22, and the 3rd inputterminal 23 are electrically connected to three of the 1st to 4th signallines 11 to 14. For example, in FIGS. 1A to 1C, the 1st input terminal21 of the 1st pulse output circuit 10_₁ is electrically connected to the1st signal line 11, the 2nd input terminal 22 thereof is electricallyconnected to the 2nd signal line 12, and the 3rd input terminal 23thereof is electrically connected to the 3rd signal line 13. The 1stinput terminal 21 of the 2nd pulse output circuit 10_₂ is electricallyconnected to the 2nd signal line 12, the 2nd input terminal 22 thereofis electrically connected to the 3rd signal line 13, and the 3rd inputterminal 23 thereof is electrically connected to the 4th signal line 14.

Further, as for a m-th pulse output circuit (□m□≥2) of the shiftregister described in this embodiment, the 4th input terminal 24 of them-th pulse output circuit is electrically connected to the 1st outputterminal 25 of a (m−1)-th pulse output circuit, the 5th input terminal26 of the m-th pulse output circuit is electrically connected to the 1stoutput terminal 25 of a (m+2)-th pulse output circuit, the 1st outputterminal 25 of the m-th pulse output circuit is electrically connectedto the 4th input terminal 24 of a (m+1)-th pulse output circuit, and the2nd output terminal 27 of the m-th pulse output circuit outputs a signalto OUT(m).

For example, as for a 3rd pulse output circuit 10_₃, the 4th inputterminal 24 of the 3rd pulse output circuit 10_₃ is electricallyconnected to the 1st output terminal 25 of a 2nd pulse output circuit10_₂, the 5th input terminal 26 of the 3rd pulse output circuit 10_₃ iselectrically connected to the 1st output terminal 25 of a 5th pulseoutput circuit 10_₅, and the 1st output terminal 25 of the 3rd pulseoutput circuit 10_₃ is electrically connected to the 4th input terminal24 of a 4th pulse output circuit 10_₄ and the 5th input terminal 26 ofthe 1st pulse output circuit 10_₁.

Further, a 1st start pulse (SP1) is input to the 4th input terminal 24of the 1st pulse output circuit 10_₁. A 2nd start pulse (SP2) is inputto the 5th input terminal 26 of a (n−1)-th pulse output circuit10__((n-1)). A 3rd start pulse (SP3) is input to the 5th input terminal26 of the n-th pulse output circuit 10__(n). The 2nd start pulse (SP2)and the 3rd start pulse (SP3) may be input from the outside or generatedinside a driver circuit.

Next, a specific structure of each of the 1st to n-th pulse outputcircuits 10_₁ to 10__(n) will be described.

FIG. 1C is a schematic view of a pulse output circuit of one embodimentof the present invention. Each of the 1st to n-th pulse output circuits10_₁ to 10__(n) includes an output portion 70 including a 1st transistor101 and a 3rd transistor 103 for outputting the 1st clock signal CK1 tothe output line with a node f1 controlled, a 2nd transistor 102 foroutputting a low-potential drive voltage VSS1 to the output line with anode f2 controlled, and a 4th transistor 104 for outputting avariable-potential drive voltage VSS2 to the output line with the nodef2 controlled, and a control portion 60 which controls the node f1 andthe node f2. Further, signals are supplied to the 1st to 4th transistors101 to 104 from a 1st power source line 31, a 2nd power source line 32,and a 8th power source line 38, in addition to the 1st input terminal21, the 4th input terminal 24, the 5th input terminal 26, the 1st outputterminal 25, and the 2nd output terminal 27.

A 1st electrode of the 1st transistor 101 is electrically connected tothe 1st input terminal 21, a 2nd electrode thereof is electricallyconnected to a 1st electrode of the 2nd transistor 102, and a gateelectrode thereof is electrically connected to the node f1. The 1stelectrode of the 2nd transistor 102 is electrically connected to the 1stoutput terminal 25, a 2nd electrode thereof is electrically connected tothe 1st power source line 31, and a gate electrode thereof iselectrically connected to the node f2. A 1st electrode of the 3rdtransistor 103 is electrically connected to the 1st input terminal 21, a2nd electrode thereof is electrically connected to a 1st electrode ofthe 4th transistor 104, and a gate electrode thereof is electricallyconnected to the node f1. The 1st electrode of the 4th transistor 104 iselectrically connected to the 2nd output terminal 27, a 2nd electrodethereof is electrically connected to the 2nd power source line 32, and agate electrode thereof is electrically connected to the node f2.

As shown in FIG. 2, in the node f2, in order to reduce the voltagestress applied to the 2nd transistor 102, a transistor 100 may beprovided between the gate electrodes of the 2nd transistor 102 and the4th transistor 104. In that case, a gate electrode of the transistor 100is electrically connected to a 7th power source line 37.

The control portion 60 includes 5th to 11th transistors 105 to 111 inFIG. 6C; however, any other configuration can be employed as long as thecontrol portion 60 can control the nodes f1 and f2. In this embodiment,description is made on operation of the pulse output circuit withreference to the timing chart shown in FIG. 4, in the case of employingthe configuration of the control portion 60 shown in FIG. 6C.Specifically, description is made with the timing chart of FIG. 4 bydividing one period into a 1st period 51, a 2nd period 52, a 3rd period53, a 4th period 54, and a 5th period 55. Start time of the 1st period51, a start time of the 2nd period 52, a start time of the 3rd period53, a start time of the 4th period 54, and a start time of the 5thperiod 55 are denoted by a, b, c, d, and e, respectively. A period t1from a time 61 to a time 62 including the 1st period 51, the 2nd period52, the 3rd period 53, and the 4th period 54 is a normal mode, and aperiod t2 from the time 62 to a time 63, which is the 5th period 55, isa batch mode. Further, the period t2 is followed by the normal modeagain in this embodiment. Note that in the following description, the1st to 4th transistors 101 to 104 are n-channel transistors, so thatthey are each turned on when voltage (Vgs) between the gate electrodeand the source electrode exceeds the threshold voltage (Vth).

An output of the 1st pulse output circuit 10_₁ shown in FIG. 1A isdescribed. The 1st input terminal 21 of the 1st pulse output circuit10_₁ is electrically connected to the 1st signal line 11 for supplyingthe 1st clock signal CK1, the 2nd input terminal 22 thereof iselectrically connected to the 2nd signal line 12 for supplying the 2ndclock signal CK2, and the 3rd input terminal 23 thereof is electricallyconnected to the 3rd signal line 13 for supplying the 3rd clock signalCK3.

The low-potential drive voltage VSS1, the variable potential drivevoltage VSS2, and a high-potential drive voltage VDD are supplied to the1st power source line 31, the 2nd power source line 32, and the 8thpower source line 38, respectively. In this embodiment, VSS1 is lowerthan VDD, and VSS2 is lower than or equal to VDD. Further, the 1st to4th clock signals CK1 to CK4 each alternate between an H level and an Llevel at regular intervals; the potential at the H level is VDD and thepotential at the L level is VSS1. In addition, VSS1 is 0 forsimplification of explanation in this embodiment; however, the presentinvention is not limited thereto.

In the 1st period 51, the 1st start pulse SP1 is set to the H level (ata in FIG. 4) to charge the node f1 to increase the potential thereof,and the node f2 is discharged to VSS1. Therefore, the 1st transistor 101and the 3rd transistor 103 are turned on, and the 2nd transistor 102 andthe 4th transistor 104 are turned off. Consequently, each of thepotentials of the 1st output terminal 25 and the 2nd output terminal 27in the 1st period 51 is at the L level of the 1st clock signal CK1 (seeFIG. 5A).

In the 2nd period 52, the 1st clock signal CK1 is changed to the H level(at b in FIG. 4) to make the node f1 into the floating state, so thatthe node f1 is bootstrapped by capacitive coupling of parasiticcapacitance formed in a portion where the gate electrode of the 3rdtransistor 103 overlaps with the source electrode thereof. Accordingly,the potential of the node f1 is further increased, which turns the 1sttransistor 101 and the 3rd transistor 103 completely on. Consequently,each of the potentials of the 1st output terminal 25 and the 2nd outputterminal 27 in the 2nd period 52 is at the H level (see FIG. 5B).

During the above period, the potential of the node f2 is kept at the Llevel, so that defects due to capacitive coupling of the node f2 and the1st output terminal 25 and capacitive coupling of the node f2 and the2nd output terminal 27 can be suppressed when each of the potentials ofthe 1st output terminal 25 and the 2nd output terminal 27 rises from theL level to the H level.

In the 3rd period 53, the 1st start pulse SP1 is changed from the Hlevel to the L level (at c in FIG. 4), the 1st clock signal CK1 is keptat the H level as in the 2nd period 52, and the potential of the node f1is not changed since the 2nd period 52, so that the 1st transistor 101and the 3rd transistor 103 are kept ON. Consequently, each of thepotentials of the 1st output terminal 25 and the 2nd output terminal 27in the 3rd period 53 is at the H level (see FIG. 5C).

In the 4th period 54, the 1st clock signal CK1 is changed from the Hlevel to the L level (at d in FIG. 4), and a reset signal RESET isinput, so that the potential of the node f1 is discharged to VSS1 andthe potential of the node f2 is increased. Accordingly, the 1sttransistor 101 and the 3rd transistor 103 are turned off, and the 2ndtransistor 102 and the 4th transistor 104 are tuned on. Consequently,each of the potentials of the 1st output terminal 25 and the 2nd outputterminal 27 in the 4th period 54 is at the L level (see FIG. 5D).

Next, the normal mode is switched to a batch-ON mode, for which thepotential of the 2nd power source line 32 (VSS2) is changed from the Llevel to the H level in the 5th period 55 (at e in FIG. 4). The 1ststart pulse SP1 and the reset signal RESET are kept at the L level. Inthat time, with the H level potential supplied to the 2nd power sourceline 32, the node f2 being in the floating state is bootstrapped bycapacitive coupling of parasitic capacitance formed in a portion wherethe gate electrode of the 4th transistor 104 overlaps with the sourceelectrode thereof. Accordingly, the potential of the node f2 isincreased, which can turn the 4th transistor 104 completely on. Further,the potential of the 1st power source line 31 is kept at the L level.Consequently, in the 5th period 55, the potential of the 1st outputterminal 25 is at the L level, and that of the 2nd output terminal 27 isat the H level.

As shown in FIG. 2, in order to reduce the voltage stress applied to the2nd transistor 102 in the case where the potential of the 2nd powersource line 32 is at the H level in the 5th period 55, the transistor100 may be provided for the node f2.

In this manner, with the configuration in which the 1st power sourceline 31 is electrically connected to the 2nd electrode of the 2ndtransistor 102 and the 2nd power source line 32 is electricallyconnected to the 2nd electrode of the 4th transistor 104, the potentialof the 2nd electrode of the 2nd transistor 102 and that of the 2ndelectrode of the 4th transistor 104 can be controlled individuallywithout depending on each other in a period during which the potentialsof the 4th input terminal 24 and the 5th input terminal 26 are kept atthe L level. In that case, in the output portion 70 of the pulse outputcircuit in the shift register, the potential supplied from the 1st powersource line 31 to the 2nd transistor 102 which is electrically connectedto the 1st output terminal 25 which is connected to the pulse outputcircuit at the next stage is set to the low-potential drive voltageVSS1, and the potential supplied from the 2nd power source line 32 tothe 4th transistor 104 which is electrically connected to the 2nd outputterminal 27 which is connected to a scan signal line is set to thevariable potential drive voltage VSS2.

The variable potential drive voltage VSS2 is set to the low-potentialdrive voltage VSS1 in the normal mode, and is set to the high-potentialdrive voltage VDD in the batch-ON mode and to the low-potential drivevoltage VSS1 in a batch-OFF mode in the batch mode, whereby thepotential of the 2nd output terminal 27 can be controlled as appropriateby changing the potential of the 2nd power source line 32. Accordingly,ON signals (or OFF signals) can be output to the 2nd output terminals 27connected to respective scan signal lines at the same timing in a batch.

According to the above structure and method, display scan signals (ONsignals or OFF signals) can be output to a plurality of scan signallines at the same timing in a batch in the case of display with singlecolor (e.g., all black or all white), in a driver circuit of an imagedisplay device, so that the data writing period can be decreased.Further, a period during which a scan signal line driver portion stopsoperating can be provided after a batch display, so that powerconsumption of the scan signal line driver portion can be reduced by theperiod. Further, high-speed operation can be realized, which enables aload on a driver circuit portion to be reduced, so that a flicker on thescreen can be prevented.

FIGS. 6A to 6C illustrate a specific circuit structure of the pulseoutput circuit shown in FIG. 1C.

A shift register of one embodiment of the present invention includes the1st to n-th pulse output circuits 10_₁ to 10__(n) (n≥2) and the 1st to4th signal lines 11 to 14 for outputting clock signals (see FIG. 6A).The 1st signal line 11 outputs the 1st clock signal CK1, the 2nd signalline 12 outputs the 2nd clock signal CK2, the 3rd signal line 13 outputsthe 3rd clock signal CK3, and the 4th signal line 14 outputs the 4thclock signal CK4.

The clock signals CK are signals which alternate between an H-levelsignal and an L-level signal at regular intervals; in this embodiment,the 1st to 4th clock signals CK1 to CK4 are delayed by ¼ periodsequentially. In this embodiment, with the 1st to 4th clock signals CK1to CK4, control or the like of driving of the pulse output circuit isperformed.

Each of the 1st to n-th pulse output circuits 10_₁ to 10__(n) includesthe 1st input terminal 21, the 2nd input terminal 22, the 3rd inputterminal 23, the 4th input terminal 24, the 1st output terminal 25, the5th input terminal 26, and the 2nd output terminal 27 (see FIG. 6B).

The 1st input terminal 21, the 2nd input terminal 22, and the 3rd inputterminal 23 are electrically connected to three of the 1st to 4th signallines 11 to 14. For example, in FIGS. 6A to 6C, the 1st input terminal21 of the 1st pulse output circuit 10_₁ is electrically connected to the1st signal line 11, the 2nd input terminal 22 thereof is electricallyconnected to the 2nd signal line 12, and the 3rd input terminal 23thereof is electrically connected to the 3rd signal line 13. The 1stinput terminal 21 of the 2nd pulse output circuit 10_₂ is electricallyconnected to the 2nd signal line 12, the 2nd input terminal 22 thereofis electrically connected to the 3rd signal line 13, and the 3rd inputterminal 23 thereof is electrically connected to the 4th signal line 14.

Further, as for the m-th pulse output circuit (□m□≥2) of the shiftregister described in this embodiment, the 4th input terminal 24 of them-th pulse output circuit is electrically connected to the 1st outputterminal 25 of the (m−1)-th pulse output circuit, the 5th input terminal26 of the m-th pulse output circuit is electrically connected to the 1stoutput terminal 25 of the (m+2)-th pulse output circuit, the 1st outputterminal 25 of the m-th pulse output circuit is electrically connectedto the 4th input terminal 24 of the (m+1)-th pulse output circuit, andthe 2nd output terminal 27 of the m-th pulse output circuit outputs asignal to OUT(m).

For example, as for the 3rd pulse output circuit 10_₃, the 4th inputterminal 24 of the 3rd pulse output circuit 10_₃ is electricallyconnected to the 1st output terminal 25 of the 2nd pulse output circuit10_₂, the 5th input terminal 26 of the 3rd pulse output circuit 10_₃ iselectrically connected to the 1st output terminal 25 of the 5th pulseoutput circuit 10_₅, and the 1st output terminal 25 of the 3rd pulseoutput circuit 10_₃ is electrically connected to the 4th input terminal24 of the 4th pulse output circuit 10_₄ and the 5th input terminal 26 ofthe 1st pulse output circuit 10_₁.

Further, the 1st start pulse SP1 is input to the 4th input terminal 24of the 1st pulse output circuit 10_₁. The 2nd start pulse SP2 is inputto the 5th input terminal 26 of the (n−1)-th pulse output circuit10__((n-1)). The 3rd start pulse SP3 is input to the 5th input terminal26 of the n-th pulse output circuit 10__(n). The 2nd start pulse SP2 andthe 3rd start pulse SP3 may be input from the outside or generatedinside a driver circuit.

Next, a specific structure of each of the 1st to n-th pulse outputcircuits 10_₁ to 10__(n) will be described further in detail.

The 1st to n-th pulse output circuits 10_₁ to 10__(n) each include the1st to 4th transistors 101 to 104 and 5th to 11th transistors 105 to 111(see FIG. 6C). Further, signals are supplied to the 1st to 11thtransistors 101 to 111 from the 1st and 2nd power source lines 31 and32, and 3rd to 6th power source lines 33 to 36, in addition to the 1stinput terminal 21, the 2nd input terminal 22, the 3rd input terminal 23,the 4th input terminal 24, the 5th input terminal 26, the 1st outputterminal 25, and the 2nd output terminal 27.

The 1st electrode of the 1st transistor 101 is electrically connected tothe 1st input terminal 21, the 2nd electrode thereof is electricallyconnected to the 1st electrode of the 2nd transistor 102, and the gateelectrode thereof is electrically connected to the gate electrode of the3rd transistor 103 and a 1st electrode of the 7th transistor 107. The2nd electrode of the 2nd transistor 102 is electrically connected to the1st power source line 31, and the gate electrode thereof is electricallyconnected to the gate electrode of the 4th transistor 104, a gateelectrode of the 6th transistor 106, a 2nd electrode of the 9thtransistor 109, a 2nd electrode of the 10th transistor 110, and a 1stelectrode of the 11th transistor 111. The 1st electrode of the 3rdtransistor 103 is electrically connected to the 1st input terminal 21,and the 2nd electrode thereof is electrically connected to the 2ndoutput terminal 27. The 1st electrode of the 4th transistor 104 iselectrically connected to the 2nd output terminal 27, and the 2ndelectrode thereof is electrically connected to the 2nd power source line32. A 1st electrode of the 5th transistor 105 is electrically connectedto the 3rd power source line 33, a 2nd electrode thereof is electricallyconnected to a 2nd electrode of the 7th transistor 107, and a gateelectrode thereof is electrically connected to the 4th input terminal24. A 1st electrode of the 6th transistor 106 is electrically connectedto the 2nd electrode of the 5th transistor 105, and a 2nd electrodethereof is electrically connected to the 1st power source line 31. Agate electrode of the 7th transistor 107 is electrically connected tothe 4th power source line 34. A 1st electrode of the 8th transistor 108is electrically connected to the 5th power source line 35, a 2ndelectrode thereof is electrically connected to a 1st electrode of the9th transistor 109, and a gate electrode thereof is electricallyconnected to the 2nd input terminal 22. A gate electrode of the 9thtransistor 109 is electrically connected to the 3rd input terminal 23. A1st electrode of the 10th transistor 110 is electrically connected tothe 6th power source line 36, and a gate electrode thereof iselectrically connected to the 5th input terminal 26. A 2nd electrode ofthe 11th transistor 111 is electrically connected to the 1st powersource line 31, and a gate electrode thereof is electrically connectedto the 4th input terminal 24.

In FIG. 6C, a portion where the gate electrode of the 1st transistor101, the gate electrode of the 3rd transistor 103, and the 1st electrodeof the 7th transistor 107 are connected to one another is denoted by thenode f1. A portion where the gate electrode of the 2nd transistor 102,the gate electrode of the 4th transistor 104, the gate electrode of the6th transistor 106, the 2nd electrode of the 9th transistor 109, the 2ndelectrode of the 10th transistor 110, and the 1st electrode of the 11thtransistor 111 are connected to one another is denoted by the node f2.

As shown in FIG. 3, in the node f2, in order to reduce the voltagestress applied to the 2nd transistor 102, the 6th transistor 106, andthe 11th transistor 111, the transistor 100 may be provided between thegate electrodes of the 2nd transistor 102 and the 4th transistor 104. Inthat case, the gate electrode of the transistor 100 is electricallyconnected to the 7th power source line 37.

The connection relation where the clock signal is supplied through the2nd input terminal 22 to the gate electrode of the 8th transistor 108and the clock signal is supplied through the 3rd input terminal 23 tothe gate electrode of the 9th transistor 109 may be changed to aconnection relation where the clock signal is supplied through the 3rdinput terminal 23 to the gate electrode of the 8th transistor 108 andthe clock signal is supplied through the 2nd input terminal 22 to thegate electrode of the 9th transistor 109. Accordingly, a decrease in thepotential of the node f2 due to the decrease of the potentials of the2nd input terminal 22 and the 3rd input terminal 23 can be reduced, sothat a change of the potential of the node f2 can be suppressed andnoise can be decreased.

Next, operation of the shift register shown in FIGS. 1A to 1C isdescribed with reference to FIG. 7, FIGS. 8A and 8B, and FIGS. 9A and9B. Specifically, description is made with the timing chart of FIG. 7 bydividing one period into the 1st period 51, the 2nd period 52, the 3rdperiod 53, the 4th period 54, and the 5th period 55. The start time ofthe 1st period 51, the start time of the 2nd period 52, the start timeof the 3rd period 53, the start time of the 4th period 54, and the starttime of the 5th period 55 are denoted by a, b, c, d, and e,respectively. The period t1 from the time 61 to the time 62 includingthe 1st period 51, the 2nd period 52, the 3rd period 53, and the 4thperiod 54 is the normal mode, and the period t2 from the time 62 to thetime 63, which is the 5th period 55, is the batch mode. Further, theperiod t2 is followed by the normal mode again in this embodiment. Notethat in the following description, the 1st to 4th transistors 101 to 104are n-channel transistors, so that they are each turned on when thevoltage (Vgs) between the gate electrode and the source electrodeexceeds the threshold voltage (Vth).

Further, the output of the 1st pulse output circuit 10_₁ is described.The 1st input terminal 21 of the 1st pulse output circuit 10_₁ iselectrically connected to the 1st signal line 11 for supplying the 1stclock signal CK1, the 2nd input terminal 22 thereof is electricallyconnected to the 2nd signal line 12 for supplying the 2nd clock signalCK2, and the 3rd input terminal 23 thereof is electrically connected tothe 3rd signal line 13 for supplying the 3rd clock signal CK3.

The low-potential drive voltage VSS1 is supplied to the 1st power sourceline 31, the variable potential drive voltage VSS2 (the high-potentialdrive voltage and the low-potential drive voltage are switched to besupplied) is supplied to the 2nd power source line 32, and thehigh-potential drive voltage VDD is supplied to the 3rd to 6th powersource lines 33 to 36. In this embodiment, VSS1 is lower than VDD, andVSS2 is lower than or equal to VDD. Further, the 1st to 4th clocksignals CK1 to CK4 each alternate between an H level and an L level atregular intervals; the potential at the H level is VDD and the potentialat the L level is VSS1. In addition, VSS1 is 0 for simplification ofexplanation in this embodiment; however, the present invention is notlimited thereto.

In the 1st period 51, the 1st start pulse SP1 is set to the H level (ata in FIG. 7), so that the 5th transistor 105 and the 11th transistor 111which are electrically connected to the 4th input terminal 24 of the 1stpulse output circuit 10_₁ are turned on. The 3rd clock signal CK3 isalso H level, so that the 9th transistor 109 is also turned on. Inaddition, the high-potential drive voltage VDD is applied to the gate ofthe 7th transistor 107, so that the 7th transistor 107 is also turned on(see FIG. 8A).

At that time, since the 5th transistor 105 and the 7th transistor 107are ON, the potential of the node f1 is increased. Further, since the11th transistor 111 is ON, the potential of the node f2 is decreased.

The potential of the second electrode of the 5th transistor 105 is atthe level obtained by subtracting the threshold voltage of the 5thtransistor 105 from the potential VDD of the 3rd power source line 33where the 1st electrode of the 5th transistor 105 is a source, that is,VDD−Vth105 (Vth105 denotes the threshold voltage of the 5th transistor105). The potential of the node f1 is at the level obtained bysubtracting the threshold voltage of the 7th transistor 107 from thepotential (VDD−Vth105) of the 2nd electrode of the 7th transistor 107where the 2nd electrode of the 7th transistor 107 is a source, that is,VDD−Vth105−Vth107 (Vth107 denotes the threshold voltage of the 7thtransistor 107).

At that time, each of the potentials of the gate electrodes of the 1sttransistor 101 and the 3rd transistor 103 is (VDD−Vth105−Vth107). Whenthe potential between the gate electrode and the source electrode of the1st transistor 101 is higher than the threshold voltage of the 1sttransistor 101, i.e., when (VDD−Vth105−Vth107)>Vth101 (Vth101 denotesthe threshold voltage of the 1st transistor 101), the 1st transistor 101is turned on. Similarly, when the potential between the gate electrodeand the source electrode of the 3rd transistor 103 is higher than thethreshold voltage of the 3rd transistor 103, i.e., when(VDD−Vth105−Vth107)>Vth103 (Vth103 denotes the threshold voltage of the3rd transistor 103), the 3rd transistor 103 is turned on. Consequently,the potentials of the 1st output terminal 25 and the 2nd output terminal27 are at the L level of the 1st clock signal (CK1).

In the 2nd period 52, the level of the 1st input terminal 21 of the 1stpulse output circuit 10_₁ is changed from the L level to the H level (atb in FIG. 7). Thus, since the 1st transistor 101 and the 3rd transistor103 are ON, current flows between the source electrode and the drainelectrode of the 1st transistor 101 to increase the potential of the 1stoutput terminal 25, that is, the potential of the second electrode (thesource electrode here) of the 1st transistor 101, and current flowsbetween the source electrode and the drain electrode of the 3rdtransistor 103 to increase the potential of the 2nd output terminal 27(OUT(1)), that is, the potential of the second electrode (the sourceelectrode here) of the 3rd transistor 103. With the potential increaseof the 1st output terminal 25 and the 2nd output terminal 27, the nodef1 being in the floating state is bootstrapped by capacitive coupling ofparasitic capacitance formed in a portion where the gate electrode ofthe 1st transistor 101 overlaps with the source electrode thereof andparasitic capacitance formed in a portion where the gate electrode ofthe 3rd transistor 103 overlaps with the source electrode thereof, whichincreases the potentials of the gate electrodes of the 1st transistor101 and the 3rd transistor 103. Consequently, the potential of the nodef1, that is, the potential of the gate electrode of the 1st transistor101 and the potential of the gate electrode of the 3rd transistor 103are increased to be higher than (VDD+Vth101) and (VDD+Vth103),respectively, so that the potentials of the 1st output terminal 25 andthe 2nd output terminal 27 are at the H level of the 1st clock signalCK1 (see FIG. 8B).

At that time, the level of the 4th input terminal 24 of the 1st pulseoutput circuit 10_₁ is at the H level owing to the 1st start pulse SP1,which turns the 11th transistor 111 on to keep the level of the node f2to the L level. Therefore, defects due to capacitive coupling of thenode f2 and the 1st output terminal 25 and capacitive coupling of thenode f2 and the 2nd output terminal 27 can be suppressed when each ofthe potentials of the 1st output terminal 25 and the 2nd output terminal27 rises from the L level to the H level.

Next, in the 3rd period 53, the 1st start pulse SP1 is changed to the Llevel (at c in FIG. 7) to turn the 5th transistor 105 and the 11thtransistor 111 off. Further, the 1st clock signal CK1 is kept at the Hlevel since the 2nd period 52 and the potential of the node f1 is notchanged since the 2nd period 52, so that the signal of the H level issupplied to the 1st electrodes of the 1st transistor 101 and the 3rdtransistor 103. Consequently, the potentials of the 1st output terminal25 and the 2nd output terminal 27 are at the H level (see FIG. 9A). Inthe 3rd period 53, each transistor which is connected to the node f2 isturned off to make the node f2 to be in the floating state, but thepotentials of the 1st output terminal 25 and the 2nd output terminal 27are not changed, so that defects due to capacitive coupling of the nodef2 and the 1st output terminal 25 and capacitive coupling of the node f2and the 2nd output terminal 27 can be suppressed.

Provision of the 7th transistor 107 whose gate is applied with thehigh-potential drive voltage (VDD) from the 4th power source line 34 asshown in FIG. 6C provides the following merit with the bootstrapping.

In the case where the 7th transistor 107 whose gate is applied with thehigh-potential drive voltage (VDD) from the 4th power source line 34 isnot provided, increase of the potential of the node f1 due to thebootstrapping increases the potential of the source electrode that isthe second electrode of the 5th transistor 105 to be higher than thehigh-potential drive voltage (VDD). Then, the potential of the sourceelectrode of the 5th transistor 105 is switched to that on the 1stelectrode of the 5th transistor 105, that is, the potential on the 3rdpower source line 33. Therefore, in the 5th transistor 105, a high biasvoltage is applied between the gate electrode and the source electrodeand between the gate electrode and the drain electrode in the period ofFIG. 9A (the 3rd period 53) to apply a high voltage stress thereon,which might cause deterioration in the transistor.

With the provision of the 7th transistor 107 whose gate is applied withthe high-potential drive voltage (VDD), the potential of the secondelectrode of the 5th transistor 105 can be prevented from beingincreased as the potential of the node f1 is increased by thebootstrapping. That is, with the provision of the 7th transistor 107, anegative bias voltage applied between the gate electrode and the sourceelectrode of the 5th transistor 105 can be decreased. Accordingly, withthe circuit configuration in this embodiment, a negative bias voltageapplied between the gate electrode and the source electrode of the 5thtransistor 105 can be decreased, so that deterioration of the 5thtransistor 105 due to voltage stress can be suppressed.

The 7th transistor 107 may be provided between the 2nd electrode of the5th transistor 105 and the gate electrode of the 1st transistor 101 soas to be connected by the 1st and 2nd electrodes of the 7th transistor107, and may be provided between the 2nd electrode of the 5th transistor105 and the gate electrode of the 3rd transistor 103 so as to beconnected by the 1st and 2nd electrodes of the 7th transistor 107. Inthe case of using a shift register including a plurality of pulse outputcircuits in this embodiment, the 7th transistor 107 may be omitted in asignal line driver circuit having a larger number of stages than a scanline driver circuit.

Next, in the 4th period 54, the level of the 1st input terminal 21 inthe 1st pulse output circuit 10_₁ is changed to the L level (at d inFIG. 7) to decrease the potentials of the 1st output terminal 25 and the2nd output terminal 27. Further, the 2nd input terminal 22 is kept atthe H level and the level of the 3rd input terminal 23 is changed to theH level in the 4th period 54. The reset signal RESET is input, so thatthe level of the 5th input terminal 26 becomes the H level to turn the10th transistor 110 on. With the 10th transistor 110 turned on, thepotential of the node f2 is charged to (VDD−Vth110). (The potential ofthe node f2 is a potential obtained by subtracting the threshold voltageof the 10th transistor 110 from the potential VDD of the 6th powersource line 36, that is, (VDD−Vth110) (Vth110 denotes the thresholdvoltage of the 10th transistor 110)). Consequently, the 2nd transistor102, the 4th transistor 104, and the 6th transistor 106 are turned on.With the 2nd transistor 102 and the 4th transistor 104 turned on, thepotentials of the 1st output terminal 25 and the 2nd output terminal 27are discharged to the low-potential drive voltage VSS1; with the 6thtransistor 106 turned on, the node f1 is discharged to the low-potentialdrive voltage VSS1. Accordingly, the 1st transistor 101 and the 3rdtransistor 103 are turned off, so that the potentials of the 1st outputterminal 25 and the 2nd output terminal 27 are changed to the L level(see FIG. 9B).

Next, the normal mode is switched to a batch-ON mode, for which thepotential of the 2nd power source line 32 is changed to the H level inthe 5th period 55 (at e in FIG. 7). The 1st start pulse SP1 and thereset signal RESET are kept at the L level. At that time, the potentialof the 2nd electrode of the 10th transistor 110 is a potential obtainedby subtracting the threshold voltage of the 10th transistor 110 from thepotential VDD of the 6th power source line 36, (VDD−Vth110) where the2nd electrode of the 10th transistor 110 is a source (Vth110 denotes thethreshold voltage of the 10th transistor 110)). Further, with the Hlevel potential supplied to the 2nd power source line 32, the node f2being in the floating state is bootstrapped by capacitive coupling ofparasitic capacitance formed in a portion where the gate electrode ofthe 4th transistor 104 overlaps with the source electrode thereof.Accordingly, the potential of the node f2 is increased to(VDD−Vth110+VDD), which can turn the 4th transistor 104 on.

At that time, since the potential of the 1st power source line 31 iskept at the L level and the reset signal RESET is kept at the L level,the potential of the 1st output terminal 25 is at the L level, and thatof the 2nd output terminal 27 is at the H level in the 5th period 55.

As shown in FIG. 3, in order to reduce the voltage stress applied to the2nd transistor 102 in the case where the potential of the 2nd powersource line 32 rises to the H level (the batch-ON mode) in the 5thperiod 55, the transistor 100 may be provided for the node f2.

In this manner, with the configuration in which the 1st power sourceline 31 is electrically connected to the 2nd electrode of the 2ndtransistor 102, the 2nd electrode of the 6th transistor 106, and the 2ndelectrode of the 11th transistor 111, and the 2nd power source line 32is electrically connected to the 2nd electrode of the 4th transistor104, the potential of the 2nd electrode of the 2nd transistor 102 andthat of the 2nd electrode of the 4th transistor 104 can be controlledindividually without depending on each other in a period during whichthe potentials of the 4th input terminal 24 and the 5th input terminal26 are kept at the L level. In that case, in the output portion 70 ofthe pulse output circuit in the shift register, the potential suppliedfrom the 1st power source line 31 to the 2nd transistor 102 which iselectrically connected to the 1st output terminal 25 which is connectedto the pulse output circuit at the next stage is set to thelow-potential drive voltage VSS1, and the potential supplied from the2nd power source line 32 to the 4th transistor 104 which is electricallyconnected to the 2nd output terminal 27 which is connected to a scansignal line is set to the variable potential drive voltage VSS2.

The variable potential drive voltage VSS2 is set to the low-potentialdrive voltage VSS1 in the normal mode, and is set to the high-potentialdrive voltage VDD in the batch-ON mode and to the low-potential drivevoltage VSS1 in the batch-OFF mode in the batch mode, whereby thepotential of the 2nd output terminal 27 can be controlled as appropriateby changing the potential of the 2nd power source line 32. Accordingly,ON signals (or OFF signals) can be output to the 2nd output terminals 27connected to respective scan signal lines at the same timing in a batch.

According to the above structure and method, display scan signals (ONsignals or OFF signals) can be output to a plurality of scan signallines at the same timing in a batch in the case of display with singlecolor (e.g., all black or all white), in the driver circuit of the imagedisplay device, so that the data writing period can be decreased.Further, a period during which the scan signal line driver portion stopsoperating can be obtained after a batch display, so that powerconsumption of the scan signal line driver portion can be reduced by theperiod. Further, high-speed operation can be realized, which enables theload on the driver circuit portion to be reduced, so that a flicker onthe screen can be prevented.

The shift register and the pulse output circuit described in thisembodiment can be combined with any structures of a shift register and apulse output circuit described in other embodiments in thisspecification. Further, the embodiment of the present invention can alsobe applied to a semiconductor device. In this specification, thesemiconductor device means a device that can function utilizingsemiconductor characteristics.

Embodiment 2

In Embodiment 2, structures of a shift register and a pulse outputcircuit which are different from those described in Embodiment 1 will bedescribed.

In the structures described in Embodiment 1, all of the transistors inthe circuits are re-channel transistors; a similar structure may beapplied to the case where all of the transistors are p-channeltransistors, that is, respective conductivity types are the same in thetransistors. In that case, although not shown in particular, in FIG. 1Cor FIG. 6C, connection of the transistors may be the same, and the highand low levels of the potential of the power source line may be invertedto the cases described in Embodiment 1. In addition, the H level and theL level of each signal may be inverted to be input. This embodiment ofthe present invention can also be applied to a semiconductor device.

In this embodiment, the content of each drawing can be combined with orreplaced with any other content described in the other embodiments.

Embodiment 3

In Embodiment 3, examples of a transistor applicable to a display deviceusing a shift register of one embodiment of the present invention willbe described. There is no particular limitation on the structure of thetransistor which can be applied to the display device using the shiftregister of one embodiment of the present invention; for example, a topgate structure or a bottom gate structure with a staggered structure ora planar structure can be employed. Further, the transistor may have asingle gate structure including one channel formation region, a doublegate structure including two channel formation regions, or a triple gatestructure including three channel formation regions. The transistor mayhave a dual gate structure including two gate electrode layerspositioned over and below a channel region each with a gate insulatinglayer provided therebetween. FIGS. 18A to 18D illustrate examples ofcross-sectional structures of transistors. Transistors illustrated inFIGS. 18A to 18D are transistors using an oxide semiconductor as asemiconductor. Advantages of using an oxide semiconductor is highfield-effect mobility and low off-state current obtained even by arelatively easy and low-temperature process: however, it is needless tosay that another semiconductor may be alternatively used.

A transistor 410 illustrated in FIG. 18A is one of bottom gate thin filmtransistors and is also called an inverted staggered thin filmtransistor.

The transistor 410 includes, over a substrate 400 having an insulatingsurface, a gate electrode layer 401, a gate insulating layer 402, anoxide semiconductor layer 403, a source electrode layer 405 a, and adrain electrode layer 405 b. In addition, an insulating film 407 whichcovers the transistor 410 and is stacked over the oxide semiconductorlayer 403 is provided. A protective insulating layer 409 is formed overthe insulating film 407.

A transistor 420 illustrated in FIG. 18B is one of bottom gatetransistors called a channel-protective (channel-stop) transistor and isalso called an inverted staggered thin film transistor.

The transistor 420 includes, over the substrate 400 having an insulatingsurface, the gate electrode layer 401, the gate insulating layer 402,the oxide semiconductor layer 403, an insulating layer 427 whichfunctions as a channel protective layer covering a channel formationregion of the oxide semiconductor layer 403, the source electrode layer405 a, and the drain electrode layer 405 b. Further, the protectiveinsulating layer 409 is formed to cover the transistor 420.

A transistor 430 illustrated in FIG. 18C is a bottom gate thin filmtransistor and includes, over the substrate 400 having an insulatingsurface, the gate electrode layer 401, the gate insulating layer 402,the source electrode layer 405 a, the drain electrode layer 405 b, andthe oxide semiconductor layer 403. The insulating film 407 which coversthe transistor 430 and is in contact with the oxide semiconductor layer403 is provided. The protective insulating layer 409 is formed over theinsulating film 407.

In the transistor 430, the gate insulating layer 402 is provided overand in contact with the substrate 400 and the gate electrode layer 401;the source electrode layer 405 a and the drain electrode layer 405 b areprovided over and in contact with the gate insulating layer 402.Further, the oxide semiconductor layer 403 is provided over the gateinsulating layer 402, the source electrode layer 405 a, and the drainelectrode layer 405 b.

A transistor 440 illustrated in FIG. 18D is one of top gate thin filmtransistors. The transistor 440 includes, over the substrate 400 havingan insulating surface, an insulating layer 437, the oxide semiconductorlayer 403, the source electrode layer 405 a, the drain electrode layer405 b, the gate insulating layer 402, and the gate electrode layer 401.A wiring layer 436 a and a wiring layer 436 b are provided in contactwith and electrically connected to the source electrode layer 405 a andthe drain electrode layer 405 b, respectively.

In this embodiment, as described above, the oxide semiconductor layer403 is used as a semiconductor layer. The oxide semiconductor used forthe oxide semiconductor layer 403 contains at least one element selectedfrom In, Ga, Sn, and Zn. For example, a four-component metal oxide suchas an In—Sn—Ga—Zn—O-based oxide semiconductor, a three-component metaloxide such as an In—Ga—Zn—O-based oxide semiconductor, anIn—Sn—Zn—O-based oxide semiconductor, an In—Al—Zn—O-based oxidesemiconductor, a Sn—Ga—Zn—O-based oxide semiconductor, anAl—Ga—Zn—O-based oxide semiconductor, or a Sn—Al—Zn—O-based oxidesemiconductor, a two-component metal oxide such as an In—Zn—O-basedoxide semiconductor, a Sn—Zn—O-based oxide semiconductor, anAl—Zn—O-based oxide semiconductor, a Zn—Mg—O-based oxide semiconductor,a Sn—Mg—O-based oxide semiconductor, an In—Mg—O-based oxidesemiconductor, or an In—Ga—O-based oxide semiconductor, asingle-component metal oxide such as an In—O-based oxide semiconductor,a Sn—O-based oxide semiconductor, or a Zn—O-based oxide semiconductor,or the like can be used. In addition, any of the above oxidesemiconductors may contain an element other than In, Ga, Sn, and Zn, forexample, SiO₂.

For example, an In—Ga—Zn—O-based oxide semiconductor means an oxidesemiconductor containing indium (In), gallium (Ga), and zinc (Zn), andthere is no limitation on the composition ratio thereof.

As the oxide semiconductor layer 403, a thin film of a materialrepresented by InMO₃(ZnO)_(m) (m>0) can be used. Here, M represents oneor more metal elements selected from Ga, Al, Mn, and Co. For example,Ga, the combination of Ga and Al, the combination of Ga and Mn, thecombination of Ga and Co, or the like is used as M.

In the case where an In—Zn—O-based material is used as the oxidesemiconductor, a target to be used has a composition ratio of In:Zn=50:1to 1:2 in atomic ratio (In₂O₃:ZnO=25:1 to 1:4 in molar ratio),preferably In:Zn=20:1 to 1:1 in atomic ratio (In₂O₃:ZnO=10:1 to 1:2 inmolar ratio), far preferably In:Zn=15:1 to 1.5:1 in atomic ratio(In₂O₃:ZnO=15:2 to 3:4 in molar ratio). For example, in a target usedfor formation of an In—Zn—O-based oxide semiconductor, Z>□1.5X+Y issatisfied where In:Zn:O=X:Y:Z in atomic ratio.

In each of the transistors 410, 420, 430, and 440 using the oxidesemiconductor layer 403, the amount of current in an off state(off-state current) can be small. Accordingly, an electrical signal suchas an image signal can be retained for a longer period, and a writinginterval in the power-on state can be set longer. Accordingly, frequencyof refresh operation can be reduced, which leads to reduction in powerconsumption.

Further, each of the transistors 410, 420, 430, and 440 using the oxidesemiconductor layer 403 can exhibit relatively high field-effectmobility and thus can operate at a high speed. Accordingly, by using thetransistor in a pixel portion of a display device, a high-quality imagecan be displayed. Furthermore, the transistors can be separately formedin a circuit portion and the pixel portion over one substrate, which canreduce the number of components of the display device.

Although there is no particular limitation on a substrate that can beused as the substrate 400 having an insulating surface, a glasssubstrate made of barium borosilicate glass, aluminoborosilicate glass,or the like can be used.

In the bottom gate transistors 410, 420, and 430, an insulating filmserving as a base film may be provided between the substrate and thegate electrode layer. The base film has a function of preventingdiffusion of an impurity element from the substrate, and can be formedto have a single-layer structure or a stacked-layer structure using oneor more of a silicon nitride film, a silicon oxide film, a siliconnitride oxide film, and a silicon oxynitride film.

The gate electrode layer 401 can be formed to have a single-layerstructure or a stacked-layer structure using a metal material such asmolybdenum, titanium, chromium, tantalum, tungsten, aluminum, copper,neodymium, or scandium, or an alloy material which contains any of thesematerials as its main component.

The gate insulating layer 402 can be formed to have a single-layerstructure or a stacked-layer structure using one or more of a siliconoxide layer, a silicon nitride layer, a silicon oxynitride layer, asilicon nitride oxide layer, an aluminum oxide layer, an aluminumnitride layer, an aluminum oxynitride layer, an aluminum nitride oxidelayer, and a hafnium oxide layer by a plasma CVD method, a sputteringmethod, or the like. For example, a silicon nitride layer (SiN_(y)(y>0)) with a thickness of greater than or equal to 50 nm and less thanor equal to 200 nm is formed as a first gate insulating layer by aplasma CVD method, and a silicon oxide layer (SiO_(x) (x>0)) with athickness of greater than or equal to 5 nm and less than or equal to 300nm is formed as a second gate insulating layer over the first gateinsulating layer, so that a gate insulating layer with a total thicknessof 200 nm is formed.

As the conductive film used for the source electrode layer 405 a and thedrain electrode layer 405 b, for example, a film of an element selectedfrom Al, Cr, Cu, Ta, Ti, Mo, and W, a film of an alloy containing any ofthese elements as a component, an alloy film containing these elementsin combination, or the like can be used. The conductive film may have astructure in which a high-melting-point metal layer of Ti, Mo, W, or thelike is stacked over and/or below a metal layer of Al, Cu, or the like.An Al material in which an element (e.g., Si, Nd, or Sc) which preventsgeneration of hillocks and whiskers in an Al film is added may be usedin order to improve the heat resistance.

A material similar to that for the source electrode layer 405 a and thedrain electrode layer 405 b can be used for a conductive film used forthe wiring layer 436 a and the wiring layer 436 b which are respectivelyconnected to the source electrode layer 405 a and the drain electrodelayer 405 b.

Alternatively, the conductive film to be the source and drain electrodelayers 405 a and 405 b (including a wiring layer formed using the samelayer as the source and drain electrode layers) may be formed usingconductive metal oxide. As the conductive metal oxide, indium oxide(In₂O₃), tin oxide (SnO₂), zinc oxide (ZnO), indium oxide-tin oxidealloy (In₂O₃—SnO₂; abbreviated to ITO), indium oxide-zinc oxide alloy(In₂O₃—ZnO), or any of these metal oxide materials in which silicon orsilicon oxide is contained can be used.

As the insulating film 407, 427, 437, typically, an inorganic insulatingfilm such as a silicon oxide film, a silicon oxynitride film, analuminum oxide film, or an aluminum oxynitride film can be used.

For the protective insulating layer 409, an inorganic insulating filmsuch as a silicon nitride film, an aluminum nitride film, a siliconnitride oxide film, or an aluminum nitride oxide film can be used.

Further, a planarization insulating film may be formed over theprotective insulating layer 409 so that surface roughness due to thetransistor is reduced. For the planarization insulating film, an organicmaterial such as polyimide, acrylic, or benzocyclobutene can be used. Aswell as such an organic material, a low-dielectric constant material (alow-k material) or the like can be used. A plurality of insulating filmsformed from these materials may be stacked to form the planarizationinsulating film.

In this manner, in this embodiment, with the transistor including theoxide semiconductor layer whose off-state current is small, a displaydevice with low power consumption can be provided.

Embodiment 4

In Embodiment 4, an example of the transistor including an oxidesemiconductor layer and an example of a manufacturing method thereofwill be described in detail with reference to FIGS. 19A to 19E. The sameportions as or portions having functions similar to those in the aboveembodiments can be formed in a manner similar to those described in theabove embodiments, and thus repetitive description is omitted. Inaddition, detailed description of the same portions is omitted.

FIGS. 19A to 19E illustrate an example of a cross-sectional structure ofa transistor. A transistor 510 illustrated in FIGS. 19A to 19E is abottom-gate inverted-staggered thin film transistor which is similar tothe transistor 410 illustrated in FIG. 18A.

An oxide semiconductor used for a semiconductor layer in this embodimentis an i-type (intrinsic) oxide semiconductor or a substantially i-type(intrinsic) oxide semiconductor, which is obtained in such a manner thathydrogen, which is an n-type impurity, is removed from an oxidesemiconductor so that the oxide semiconductor is highly purified so asto contain as few impurities that are not main components of the oxidesemiconductor as possible. In other words, a feature of this embodimentis that a purified i-type (intrinsic) semiconductor or a semiconductorclose thereto is obtained not by adding an impurity but by removing animpurity such as hydrogen or water as much as possible. Thus, an oxidesemiconductor layer included in the transistor 510 is a highly purified,electrically i-type (intrinsic) oxide semiconductor layer.

In addition, the highly purified oxide semiconductor includes extremelyfew carriers (close to zero); the carrier concentration thereof is lessthan 1×10¹⁴/cm³, preferably less than 1×10¹²/cm³, far preferably lessthan 1×10¹¹/cm³.

Since the number of carriers in the oxide semiconductor is extremelysmall, the off-state current of the transistor can be reduced. Thesmaller the amount of off-state current is, the better.

Specifically, in the thin film transistor including the oxidesemiconductor layer, the off-state current density per micrometer in achannel width at room temperature can be less than or equal to 10 aA/μm(1×10⁻¹⁷ A/μm), far less than or equal to 1 aA/μm (1×10⁻¹⁸ A/μm), orstill far less than or equal to 10 zA/μm (1×10⁻²⁰ A/μm).

By using the transistor whose current in the off state (off-currentvalue) is extremely small as a transistor in a pixel portion, refreshoperation in a still image area can be performed with a small frequencyof image data writing.

The on-state current of the transistor 510 including the above-describedoxide semiconductor layer hardly depends on temperature and theoff-state current remains very small.

A process for manufacturing the transistor 510 over a substrate 505 aredescribed below with reference to FIGS. 19A to 19E.

First, a conductive film is formed over the substrate 505 having aninsulating surface, and then a gate electrode layer 511 is formed by afirst photolithography step. A resist mask may be formed by an inkjetmethod. Formation of the resist mask by an inkjet method needs nophotomask; thus, manufacturing cost can be reduced.

As the substrate 505 having an insulating surface, a substrate similarto the substrate 400 described in Embodiment 3 can be used. In thisembodiment, a glass substrate is used as the substrate 505.

An insulating film which serves as a base film may be provided betweenthe substrate 505 and the gate electrode layer 511. The base film has afunction of preventing diffusion of impurity elements from the substrate505 and can be formed to have a single-layer structure or astacked-layer structure using one or more selected from a siliconnitride film, a silicon oxide film, a silicon nitride oxide film, and asilicon oxynitride film.

The gate electrode layer 511 can be formed to have a single-layerstructure or a stacked-layer structure using a metal material such asmolybdenum, titanium, tantalum, tungsten, aluminum, copper, neodymium,or scandium, or an alloy which contains any of these materials as a maincomponent.

Next, a gate insulating layer 507 is formed over the gate electrodelayer 511. The gate insulating layer 507 can be formed to have asingle-layer structure or a stacked-layer structure using a siliconoxide layer, a silicon nitride layer, a silicon oxynitride layer, asilicon nitride oxide layer, an aluminum oxide layer, an aluminumnitride layer, an aluminum oxynitride layer, an aluminum nitride oxidelayer and/or a hafnium oxide layer by a plasma CVD method, a sputteringmethod, or the like.

As the oxide semiconductor in this embodiment, an oxide semiconductorwhich is i-type or substantially i-type with impurities removed is used.Such a highly purified oxide semiconductor is highly sensitive to aninterface state and interface charge; thus, an interface between theoxide semiconductor layer and the gate insulating layer is important.For that reason, the gate insulating layer that is to be in contact withthe highly-purified oxide semiconductor needs to have high quality.

For example, a high-density plasma CVD method using microwaves (e.g., afrequency of 2.45 GHz) is preferably adopted because an insulating layercan be dense and can have high withstand voltage and high quality. Inthat case, the highly-purified oxide semiconductor and the high-qualitygate insulating layer are in close contact with each other, whereby theinterface state density can be reduced to realize favorable interfacecharacteristics.

Needless to say, another film formation method such as a sputteringmethod or a plasma CVD method can be employed as long as it enablesformation of a high-quality insulating layer as a gate insulating layer.Further, an insulating layer whose film quality and characteristic ofthe interface between the insulating layer and the oxide semiconductorare improved by heat treatment which is performed after formation of theinsulating layer may be formed as the gate insulating layer. In anycase, any insulating layer may be used as long as the insulating layerhas characteristics of enabling reduction in interface state density ofthe interface between the insulating layer and the oxide semiconductorand formation of a favorable interface as well as having favorable filmquality as a gate insulating layer.

Further, in order that hydrogen, hydroxyl group, and moisture arecontained as little as possible in the gate insulating layer 507 and anoxide semiconductor film 530, it is preferable that the substrate 505provided with the gate electrode layer 511 or the substrate 505 providedwith the gate electrode layer 511 and the gate insulating layer 507 bepreheated in a preheating chamber of a sputtering apparatus aspretreatment for the formation of the oxide semiconductor film 530 toeliminate and remove impurities such as hydrogen and moisture adsorbedon the substrate 505. As an exhaustion unit provided in the preheatingchamber, a cryopump is preferable. This preheating treatment can beomitted. Further, this preheating treatment may be performed in asimilar manner on the substrate 505 provided with the components up toand including a source electrode layer 515 a and a drain electrode layer515 b, before formation of an insulating layer 516.

Next, over the gate insulating layer 507, the oxide semiconductor film530 with a thickness of greater than or equal to 2 nm and less than orequal to 200 nm, preferably greater than or equal to 5 nm and less thanor equal to 30 nm is formed (see FIG. 19A).

Note that before the oxide semiconductor film 530 is formed by asputtering method, reverse sputtering in which plasma is generated byintroduction of an argon gas is preferably performed to remove powderysubstances (also referred to as particles or dust) attached to a surfaceof the gate insulating layer 507. The reverse sputtering refers to amethod in which, without application of a voltage to a target side, anRF power source is used for application of a voltage to a substrate sidein an argon atmosphere to modify a surface. Instead of an argonatmosphere, a nitrogen atmosphere, a helium atmosphere, an oxygenatmosphere, or the like may be used.

The oxide semiconductor used for the oxide semiconductor film 530includes at least one element selected from In, Ga, Sn, and Zn. Forexample, any oxide semiconductor such as the four-component metal oxide,the three-component metal oxide, the two-component metal oxide, or thesingle-component metal oxide described in Embodiment 3 can be used. Inaddition, the above-described oxide semiconductor may contain an elementother than In, Ga, Sn, and Zn, for example, SiO₂.

For example, an In—Ga—Zn—O-based oxide semiconductor means an oxidesemiconductor containing indium (In), gallium (Ga), and zinc (Zn), andthere is no limitation on the composition ratio thereof.

For the oxide semiconductor layer, a thin film formed using a materialexpressed by InMO₃(ZnO)_(m) (m>0) can be used. Here, M represents one ormore metal elements selected from Zn, Ga, Al, Mn, and Co. For example,Ga, the combination of Ga and Al, the combination of Ga and Mn, thecombination of Ga and Co, or the like can be used as M.

In this embodiment, the oxide semiconductor film 530 is formed by asputtering method with the use of an In—Ga—Zn—O-based oxidesemiconductor target. The cross-sectional view at this stage correspondsto FIG. 19A. The oxide semiconductor film 530 can be formed by asputtering method in a rare gas (typically argon) atmosphere, an oxygenatmosphere, or a mixed atmosphere of a rare gas and oxygen.

In the case where an In—Zn—O-based material is used as the oxidesemiconductor, a target to be used has a composition ratio of In:Zn=50:1to 1:2 in atomic ratio (In₂O₃:ZnO=25:1 to 1:4 in molar ratio),preferably In:Zn=20:1 to 1:1 in atomic ratio (In₂O₃:ZnO=10:1 to 1:2 inmolar ratio), far preferably In:Zn=15:1 to 1.5:1 in atomic ratio(In₂O₃:ZnO=15:2 to 3:4 in molar ratio). For example, in a target usedfor formation of an In—Zn—O-based oxide semiconductor, Z>□1.5X+Y issatisfied where In:Zn:O=X:Y:Z in atomic ratio. The filling rate of theoxide target is 90% to 100%, preferably 95% to 100%. Such a metal oxidetarget with high filling rate enables the deposited oxide semiconductorfilm to be dense.

It is preferable that a high-purity gas from which impurities such ashydrogen, water, hydroxyl group, or hydride have been removed be used asa sputtering gas used for the formation of the oxide semiconductor film530.

The substrate is held in a deposition chamber kept under reducedpressure, and the substrate temperature is set to a temperature higherthan or equal to 100° C. and lower than or equal to 600° C., preferablyhigher than or equal to 200° C. and lower than or equal to 400° C. Theoxide semiconductor film is formed while the substrate is heated, theconcentration of impurities included in the oxide semiconductor film canbe reduced. In addition, damage by sputtering can be reduced. Then, asputtering gas from which hydrogen and moisture have been removed isintroduced into the deposition chamber while moisture remaining thereinis removed, so that the oxide semiconductor film 530 is formed over thesubstrate 505 with the use of the above target. In order to removemoisture remaining in the deposition chamber, an entrapment vacuum pumpsuch as a cryopump, an ion pump, or a titanium sublimation pump ispreferably used. The evacuation unit may be a turbo pump provided with acold trap. In the deposition chamber which is evacuated with thecryopump, a hydrogen atom, a compound containing a hydrogen atom, suchas water (H₂O), (far preferably, also a compound containing a carbonatom), and the like are removed, whereby the concentration of impuritiesin the oxide semiconductor film formed in the deposition chamber can bereduced.

According to one example of the deposition condition, the distancebetween the substrate and the target is 100 mm, the pressure is 0.6 Pa,the direct-current (DC) power is 0.5 kW, and the atmosphere is an oxygenatmosphere (the proportion of the oxygen flow rate is 100%). A pulseddirect-current power source is preferably used, in which case powdersubstances (also referred to as particles or dust) that are generated infilm deposition can be reduced and the film thickness can be uniform.

Next, the oxide semiconductor film 530 is processed into anisland-shaped oxide semiconductor layer by a second photolithographystep. A resist mask for forming the island-shaped oxide semiconductorlayer may be formed by an ink-jet method. Formation of the resist maskby an inkjet method needs no photomask; thus, manufacturing cost can bereduced.

In the case where a contact hole is formed in the gate insulating layer507, a step of forming the contact hole can be performed at the sametime as processing of the oxide semiconductor film 530.

Note that etching of the oxide semiconductor film 530 may be dryetching, wet etching, or both dry etching and wet etching. As an etchantused for wet etching of the oxide semiconductor film 530, for example, amixed solution of phosphoric acid, acetic acid, and nitric acid, or anammonium hydroxide-hydrogen peroxide mixture (a 31 wt % hydrogenperoxide solution: 28 wt % ammonia water:water=5:2:2) can be used.ITO07N (produced by KANTO CHEMICAL CO., INC.) may be used as well.

Next, the oxide semiconductor layer is subjected to first heattreatment. The oxide semiconductor layer can be dehydrated ordehydrogenated by this first heat treatment. The temperature of thefirst heat treatment is higher than or equal to 400° C. and lower thanor equal to 750° C., preferably higher than or equal to 400° C. andlower than the strain point of the substrate. In this embodiment, thesubstrate is put in an electric furnace which is a kind of heattreatment apparatus and heat treatment is performed on the oxidesemiconductor layer at 450° C. for one hour in a nitrogen atmosphere,and then, water or hydrogen is prevented from entering the oxidesemiconductor layer by preventing exposure to the air; thus, an oxidesemiconductor layer 531 is obtained (see FIG. 19B).

The heat treatment apparatus is not limited to an electric furnace; adevice for heating an object by heat conduction or heat radiation from aheating element such as a resistance heating element may be used. Forexample, an RTA (rapid thermal anneal) apparatus such as a GRTA (gasrapid thermal anneal) apparatus or an LRTA (lamp rapid thermal anneal)apparatus can be used. An LRTA apparatus is an apparatus for heating anobject by radiation of light (an electromagnetic wave) emitted from alamp such as a halogen lamp, a metal halide lamp, a xenon arc lamp, acarbon arc lamp, a high pressure sodium lamp, or a high pressure mercurylamp. A GRTA apparatus is an apparatus for heat treatment using ahigh-temperature gas. As the high-temperature gas, an inert gas whichdoes not react with an object by heat treatment, such as nitrogen or arare gas like argon, is used.

For example, as the first heat treatment, GRTA may be performed,according to which the substrate is moved into an inert gas heated to ahigh temperature as high as 650° C. to 700° C., heated for severalminutes, and moved out of the inert gas heated to the high temperature.

In the first heat treatment, it is preferable that water, hydrogen, andthe like be not contained in the atmosphere of nitrogen or the rare gassuch as helium, neon, or argon. It is preferable that the purity ofnitrogen or the rare gas such as helium, neon, or argon which isintroduced into the heat treatment apparatus be set to be 6N (99.9999%)or higher, preferably 7N (99.99999%) or higher (that is, theconcentration of impurities is 1 ppm or less, preferably 0.1 ppm orless).

After the oxide semiconductor layer is heated in the first heattreatment, a high-purity oxygen gas, a high-purity N₂O gas, or ultra-dryair (having a dew point lower than or equal to −40° C., preferably lowerthan or equal to −60° C.) may be introduced into the furnace while theheating temperature is being maintained or being decreased. It ispreferable that the oxygen gas or the N₂O gas do not include water,hydrogen, and the like. It is preferable that the purity of the oxygengas or the N₂O gas that is introduced into the heat treatment apparatusbe greater than or equal to 6N, preferably greater than or equal to 7N(i.e., the concentration of impurities in the oxygen gas or the N₂O gasis 1 ppm or less, preferably 0.1 ppm or less). The oxygen gas or the N₂Ogas act to supply oxygen which is a main component of the oxidesemiconductor and which has been reduced at the same time as the stepfor removing impurities by dehydration or dehydrogenation, so that theoxide semiconductor layer is highly purified and made to be electricallyi-type (intrinsic).

The first heat treatment for the oxide semiconductor layer can also beperformed on the oxide semiconductor film 530 which has not beenprocessed into the island-shaped oxide semiconductor layer. In thatcase, the substrate is taken out from the heating apparatus after thefirst heat treatment, and then a photolithography step is performedthereon.

The first heat treatment may be performed at either of the followingtimings without limitation to the above-described timing as long as itis performed after the oxide semiconductor layer is formed: after asource electrode layer and a drain electrode layer are formed over theoxide semiconductor layer; after an insulating layer is formed over thesource electrode layer and the drain electrode layer.

In the case where a contact hole is formed in the gate insulating layer507, the formation of the contact hole may be performed either before orafter the first heat treatment is performed on the oxide semiconductorfilm 530.

Further, as the oxide semiconductor layer, an oxide semiconductor layerhaving a crystal region with a large thickness (a single crystalregion), that is, a crystal region which is c-axis-alignedperpendicularly to a surface of the film may be formed by performingfilm deposition twice and heat treatment twice regardless of thematerial of a base component such as an oxide, a nitride, a metal, orthe like. For example, a first oxide semiconductor film with a thicknessof greater than or equal to 3 nm and less than or equal to 15 nm isformed and then first heat treatment is performed thereon at atemperature higher than or equal to 450° C. and lower than or equal to850° C., preferably higher than or equal to 550° C. and lower than orequal to 750° C. in an atmosphere of nitrogen, oxygen, a rare gas, ordry air, whereby a first oxide semiconductor film which includes acrystalline region (including plate-like crystals) in a region includingits surface is formed. Then, a second oxide semiconductor film which isthicker than the first oxide semiconductor film is formed and thensecond heat treatment is performed thereon at a temperature higher thanor equal to 450° C. and lower than or equal to 850° C., preferablyhigher than or equal to 600° C. and lower than or equal to 700° C., sothat crystal growth proceeds upward with the use of the first oxidesemiconductor film as a seed of the crystal growth, whereby the wholesecond oxide semiconductor film is crystallized. In this manner, anoxide semiconductor layer which includes a thick crystalline region maybe formed.

Next, a conductive film which serves as a source electrode layer and adrain electrode layer (including a wiring formed using the same layer asthe source electrode layer and the drain electrode layer) is formed overthe gate insulating layer 507 and the oxide semiconductor layer 531. Asthe conductive film serving as the source electrode layer 515 a and thedrain electrode layer 515 b, the material used for the source electrodelayer 405 a and the drain electrode layer 405 b which is described inEmbodiment 3 can be used.

A resist mask is formed over the conductive film by a thirdphotolithography step, and is selectively etched to form the sourceelectrode layer 515 a and the drain electrode layer 515 b, and then, theresist mask is removed (see FIG. 19C).

Light exposure at the time of the formation of the resist mask in thethird photolithography step may be performed using ultraviolet light,KrF laser light, or ArF laser light. A channel length L of a transistoris determined by a distance between respective bottom ends of the sourceelectrode layer and the drain electrode layer, which are adjacent toeach other over the oxide semiconductor layer 531. In the case wherelight exposure is performed for a channel length L of less than 25 nm,the light exposure at the time of the formation of the resist mask inthe third photolithography step may be performed using extremeultraviolet light having an extremely short wavelength of severalnanometers to several tens of nanometers. In the light exposure withextreme ultraviolet light, the resolution is high and the focus depth islarge. Therefore, the channel length L of the transistor can be greaterthan or equal to 10 nm and less than or equal to 1000 nm, which enableshigh operation speed of a circuit.

In order to reduce the number of photomasks used in a photolithographystep and reduce the number of photolithography steps, an etching stepmay be performed with the use of a multi-tone mask which is alight-exposure mask through which light is transmitted to have aplurality of intensities. A resist mask formed with the use of amulti-tone mask has a plurality of thicknesses and further can bechanged in shape by etching; therefore, the resist mask can be used in aplurality of etching steps for processing into different patterns.Therefore, a resist mask corresponding to at least two kinds ofdifferent patterns can be formed using one multi-tone mask. Thus, thenumber of photomasks can be reduced and the number of correspondingphotolithography steps can be also reduced, whereby simplification of aprocess can be realized.

It is preferable that etching conditions be optimized so as not to etchand divide the oxide semiconductor layer 531 when the conductive film isetched. However, it is difficult to obtain conditions under which onlythe conductive film is etched but the oxide semiconductor layer 531 isnot etched at all. Therefore, in some cases, part of the oxidesemiconductor layer 531 is etched to be an oxide semiconductor layerhaving a groove (a depressed portion) at the time of etching of theconductive film.

In this embodiment, a Ti film is used as the conductive film and anIn—Ga—Zn—O-based oxide semiconductor is used for the oxide semiconductorlayer 531, and therefore, an ammonia hydrogen peroxide mixture (a mixedsolution of ammonia, water, and a hydrogen peroxide solution) is used asan etchant.

Next, plasma treatment using a gas such as N₂O, N₂, or Ar, may beperformed thereof to remove water or the like adsorbed to a surface ofan exposed portion of the oxide semiconductor layer. In the case wherethe plasma treatment is performed, the insulating layer 516 which servesas a protective insulating film in contact with part of the oxidesemiconductor layer is formed without being exposed to the air.

The insulating layer 516 can be formed to a thickness of at least 1 nmby a method by which impurities such as water and hydrogen do not enterthe insulating layer 516, such as a sputtering method. When hydrogen iscontained in the insulating layer 516, entry of the hydrogen to theoxide semiconductor layer or extraction of oxygen in the oxidesemiconductor layer by the hydrogen is caused, whereby a backchannel ofthe oxide semiconductor layer comes to be n-type (to have a lowerresistance); thus, a parasitic channel might be formed. Therefore, it isimportant that a formation method in which hydrogen is not used beemployed so that the insulating layer 516 contains hydrogen as little aspossible.

In this embodiment, a silicon oxide film is formed to a thickness of 200nm as the insulating layer 516 by a sputtering method. The substratetemperature in the film formation may be higher than or equal to roomtemperature and lower than or equal to 300° C.: in this embodiment, 100°C. The silicon oxide film can be formed by a sputtering method in a raregas (typically, argon) atmosphere, an oxygen atmosphere, or a mixedatmosphere of a rare gas and oxygen. As a target, a silicon oxide targetor a silicon target may be used. For example, the silicon oxide film canbe formed using a silicon target by a sputtering method in an atmospherecontaining oxygen. As the insulating layer 516 which is formed incontact with the oxide semiconductor layer, an inorganic insulating filmwhich does not contain impurities such as moisture, a hydrogen ion, andOH⁻ and blocks the entry of these impurities from the outside is used.Typically, a silicon oxide film, a silicon oxynitride film, an aluminumoxide film, an aluminum oxynitride film, or the like is used.

As in the case of forming the oxide semiconductor film 530, anentrapment vacuum pump (e.g., a cryopump) is preferably used in order toremove moisture remaining in a deposition chamber used for forming theinsulating layer 516. The insulating layer 516 may be formed in thedeposition chamber in which evacuation has been performed with acryopump, whereby the concentration of impurities in the insulatinglayer 516 can be reduced. A turbo pump provided with a cold trap may bealternatively used as an evacuation unit for removing moisture remainingin the deposition chamber used for forming the insulating layer 516.

It is preferable that a high-purity gas from which impurities such ashydrogen, water, hydroxyl group, or hydride have been removed be used asa sputtering gas for the formation of the insulating layer 516.

Next, second heat treatment (preferably at 200° C. to 400° C., forexample, 250° C. to 350° C.) is performed in an inert gas atmosphere, adry air atmosphere, or an oxygen gas atmosphere. For example, the secondheat treatment is performed in a nitrogen atmosphere at 250° C. for onehour. According to the second heat treatment, part of the oxidesemiconductor layer (a channel formation region) is heated while beingin contact with the insulating layer 516.

Through the above process, the first heat treatment is performed on theoxide semiconductor film, whereby impurities such as hydrogen, moisture,hydroxyl group, or hydride (also referred to as a hydrogen compound) canbe intentionally eliminated from the oxide semiconductor layer andoxygen, which is one of main components of the oxide semiconductor buthas been reduced through the step of eliminating the impurities, can besupplied. Accordingly, the oxide semiconductor layer is highly purifiedand is made to be electrically i-type (intrinsic).

Through the above steps, the transistor 510 is formed (see FIG. 19D).

A silicon oxide layer having a lot of defects may be used as theinsulating layer 516, so that heat treatment after formation of thesilicon oxide layer has an effect in diffusing an impurity such ashydrogen, moisture, a hydroxyl group, or hydride contained in the oxidesemiconductor layer to the oxide insulating layer to further reduceimpurities contained in the oxide semiconductor layer.

A protective insulating layer 506 may be formed over the insulatinglayer 516. For example, a silicon nitride film is formed by an RFsputtering method. The RF sputtering method, which has highproductivity, is preferable as a film formation method of the protectiveinsulating layer. As the protective insulating layer, an inorganicinsulating film which does not contain impurities such as moisture andblocks the entry of the impurities from the outside is used; forexample, a silicon nitride film, an aluminum nitride film, or the likeis used. In this embodiment, a protective insulating layer is formedusing a silicon nitride film as the protective insulating layer 506 (seeFIG. 19E).

In this embodiment, as the protective insulating layer 506, a siliconnitride film is formed by heating the substrate 505 provided with thecomponents up to and including the insulating layer 516, to atemperature of 100° C. to 400° C., introducing a sputtering gascontaining high-purity nitrogen from which hydrogen and moisture havebeen removed, and using a target of silicon semiconductor. In this case,the protective insulating layer 506 is preferably deposited removingresidual moisture in a treatment chamber, similarly to the insulatinglayer 516.

After the formation of the protective insulating layer, heat treatmentmay be further performed at a temperature higher than or equal to 100°C. and lower than or equal to 200° C. in the air for 1 hour to 30 hours.This heat treatment may be performed at a fixed heating temperature.Alternatively, the following change in the heating temperature may beconducted plural times repeatedly: the heating temperature is increasedfrom room temperature to a temperature higher than or equal to 100° C.and lower than or equal to 200° C. and then decreased to roomtemperature.

In this manner, the transistor including the highly-purified oxidesemiconductor layer, which is manufactured in accordance with thisembodiment, is used, whereby current in an off state (off-state current)can be further reduced. Accordingly, an electric signal such as an imagesignal can be retained for a longer period and a writing interval can beset longer. Therefore, the frequency of refresh operation can bereduced, which increases a reduction in power consumption.

In addition, since the transistor including the highly-purified oxidesemiconductor layer exhibits high field-effect mobility, which enableshigh-speed operation. Accordingly, with the transistor in a pixelportion of a display device, a high-quality image can be displayed.Further, the transistors can be separately formed in a circuit portionand the pixel portion over one substrate, and thus the number ofcomponents of the display device can be reduced.

Embodiment 4 can be implemented in appropriate combination with anyother structure described in the other embodiments.

Embodiment 5

A display device can be manufactured using the shift register describedin any one of Embodiments 1 and 2. Further, part or all of a drivercircuitry which includes the transistor can be formed over a substratewhere a pixel portion is formed, whereby a system-on-panel can beobtained.

In FIG. 10A, a sealant 4005 is provided so as to surround a pixelportion 4002 provided over a first substrate 4001. In FIG. 10A, a scanline driver circuit 4004 and a signal line driver circuit 4003 each areformed using a single crystal semiconductor film or a polycrystallinesemiconductor film over another substrate, and mounted in a regiondifferent from the region surrounded by the sealant 4005 over the firstsubstrate 4001. Various signals and potential are supplied to the signalline driver circuit 4003 and the scan line driver circuit 4004 and thepixel portion 4002 from flexible printed circuits (FPCs) 4018 a and 4018b.

In FIGS. 10B and 10C, the sealant 4005 is provided so as to surround thepixel portion 4002 and the scan line driver circuit 4004 which areprovided over the first substrate 4001. A second substrate 4006 isprovided over the pixel portion 4002 and the scan line driver circuit4004. Consequently, the pixel portion 4002 and the scan line drivercircuit 4004 are sealed together with a display element, by the firstsubstrate 4001, the sealant 4005, and the second substrate 4006. InFIGS. 10B and 10C, the signal line driver circuit 4003 which is formedusing a single crystal semiconductor film or a polycrystallinesemiconductor film over another substrate is mounted in a region that isdifferent from the region surrounded by the sealant 4005 over the firstsubstrate 4001. In FIGS. 10B and 10C, various signals and potentials aresupplied to the signal line driver circuit 4003 which is separatelyformed, the scan line driver circuit 4004, and the pixel portion 4002from an FPC 4018.

Although FIGS. 10B and 10C illustrate the example in which the signalline driver circuit 4003 is formed separately and mounted on the firstsubstrate 4001, an embodiment of the present invention is not limited tothis structure. The scan line driver circuit may be separately formedand then mounted, or part of the signal line driver circuit or part ofthe scan line driver circuit may be separately formed and then mounted.

A connection method of a separately formed driver circuit is notparticularly limited; a chip on glass (COG) method, a wire bondingmethod, a tape automated bonding (TAB) method, or the like can be used.FIG. 10A illustrates the example in which the signal line driver circuit4003 and the scan line driver circuit 4004 are mounted by a COG method;FIG. 10B illustrates the example in which the signal line driver circuit4003 is mounted by a COG method; FIG. 10C illustrates the example inwhich the signal line driver circuit 4003 is mounted by a TAB method.

The display device includes in its category a panel with a displayelement sealed and a module with an IC or the like including acontroller mounted on the panel.

Note that the display device in this specification also means an imagedisplay device or a light source (including a lighting device). Further,the display device also includes in its category the following modules:a module to which a connector such as an FPC, a TAB tape, or a TCP isattached; a module having a TAB tape or a TCP at the tip of which aprinted wiring board is provided; and a module in which an integratedcircuit (IC) is directly mounted on a display element by a COG method.

The shift register descried in any of Embodiments 1 and 2 can be appliedto the pixel portion, the scan line driver circuit, and the signal linedrive circuit provided over the first substrate. With the shiftregister, display scan signals (ON signals or OFF signals) can be outputat the same timing in a batch to a plurality of scan signal lines in thecase of display with single color (e.g., all black or all white), whichenables the data writing period to be decreased. Further, a periodduring which a scan signal line driver portion stops operating can beprovided after a batch display, so that power consumption of the scansignal line driver portion can be reduced by the period. Further,high-speed operation can be realized, which enables a load on a drivercircuit portion to be reduced, so that a flicker on the screen can beprevented.

As the display element provided in the display device, a liquid crystalelement (also referred to as a liquid crystal display element) or alight-emitting element (also referred to as a light-emitting displayelement) can be used. The light-emitting element includes, in itscategory, an element whose luminance is controlled by a current or avoltage, and specifically includes, in its category, an inorganicelectroluminescent (EL) element, an organic EL element, and the like. Adisplay medium whose contrast is changed by an electric effect, such aselectronic ink, can be used as well.

One embodiment of a display device will be described with reference toFIGS. 11 to 13. FIGS. 11 to 13 correspond to cross-sectional views alongline M-N in FIG. 10B.

As illustrated in FIGS. 11 to 13, the display device includes aconnection terminal electrode 4015 and a terminal electrode 4016. Theconnection terminal electrode 4015 and the terminal electrode 4016 areelectrically connected to a terminal provided for the FPC 4018 via ananisotropic conductive film 4019.

The connection terminal electrode 4015 is formed using the sameconductive film as a first electrode layer 4030, and the terminalelectrode 4016 is formed using the same conductive film as source anddrain electrodes of transistors 4010 and 4011.

Each of the pixel portion 4002 and the scan line driver circuit 4004which are provided over the first substrate 4001 includes a plurality oftransistors. In FIGS. 11 to 13, the transistor 4010 included in thepixel portion 4002 and the transistor 4011 included in the scan linedriver circuit 4004 are illustrated as an example. In FIG. 11,insulating films 4020 and 4024 are provided over the transistor 4010 andthe transistor 4011. In FIGS. 12 and 13, an insulating layer 4021 isfurther provided. An insulating film 4023 is an insulating film servingas a base film.

In this embodiment, the shift register described in any one ofEmbodiments 1 and 2 can be applied to the scan line driver circuit 4004.With the transistor, power consumption of a driver circuit portion canbe suppressed in the display device of this embodiment shown in FIGS. 11to 13, and a flicker on a screen can be prevented.

The transistor 4010 included in the pixel portion 4002 is electricallyconnected to the display element, which is included in a display panel.There is no particular limitation on the kind of the display element aslong as display can be performed; various kinds of display elements canbe employed.

An example of a liquid crystal display device using a liquid crystalelement as a display element is described in FIG. 11. In FIG. 11, aliquid crystal element 4013 which is a display element includes thefirst electrode layer 4030, a second electrode layer 4031, and a liquidcrystal layer 4008. Insulating films 4032 and 4033 serving as alignmentfilms are provided so that the liquid crystal layer 4008 is providedtherebetween. The second electrode layer 4031 is provided on the secondsubstrate 4006 side, and the first electrode layer 4030 and the secondelectrode layer 4031 are stacked with the liquid crystal layer 4008provided therebetween.

Reference numeral 4035 denotes a columnar spacer which is obtained byselective etching of an insulating film and is provided in order tocontrol the thickness of the liquid crystal layer 4008 (a cell gap). Theshape of the spacer is not limited to a columnar shape; a sphericalspacer may be used, for example.

In the case where a liquid crystal element is used as the displayelement, a thermotropic liquid crystal, a low-molecular liquid crystal,a high-molecular liquid crystal, a polymer dispersed liquid crystal, aferroelectric liquid crystal, an anti-ferroelectric liquid crystal, orthe like can be used. Such a liquid crystal material exhibits acholesteric phase, a smectic phase, a cubic phase, a chiral nematicphase, an isotropic phase, or the like depending on a condition.

Alternatively, liquid crystal exhibiting a blue phase for which analignment film is unnecessary may be used. A blue phase is one of liquidcrystal phases, which is generated just before a cholesteric phasechanges into an isotropic phase while the temperature of cholestericliquid crystal is increased. Since the blue phase appears only in anarrow temperature range, a liquid crystal composition in which severalweight percent or more of a chiral material is mixed is used for theliquid crystal layer in order to improve the temperature range. Theliquid crystal composition which includes a liquid crystal showing ablue phase and a chiral agent has a short response time of 1 msec orless, has optical isotropy, which makes the alignment process unneeded,and has a small viewing angle dependence. In addition, since analignment film does not need to be provided and rubbing treatment isunnecessary, electrostatic discharge damage caused by the rubbingtreatment can be prevented and defects and damage of the liquid crystaldisplay device can be reduced in the manufacturing process. Thus,productivity of the liquid crystal display device can be increased.

Further, polymer dispersed liquid crystal (PDLC) and polymer networkliquid crystal (PNLC) can be used without involving an alignment film.An example in which polymer liquid crystal is used for a liquid crystallayer is illustrated in FIG. 14.

A display device shown in FIG. 14 is a reflective liquid crystal displaydevice in which the liquid crystal element 4013 provided between thefirst substrate 4001 and the second substrate 4006 includes a firstelectrode layer 4930 which has light-reflecting properties, a secondelectrode layer 4931 which has light-transmitting properties, and aliquid crystal layer 4908 using polymer dispersed liquid crystal. Aretardation plate 4951 and a polarizing plate 4952 are provided on theouter side (on the side opposite to the liquid crystal layer 4908) ofthe second substrate 4006 which is a viewer side. The retardation plate4951 and the polarizing plate 4952 are stacked to form a circularlypolarizing plate.

White display (light display) is performed using scattered light byliquid crystal in the liquid crystal display device including the liquidcrystal layer using polymer dispersed liquid crystal. In the liquidcrystal layer 4908, liquid crystal particles are dispersed in a polymerlayer forming macromolecular network.

When no voltage is applied between the first electrode layer 4930 andthe second electrode layer 4931 (the case also called an OFF state), theliquid crystal particles dispersed in the polymer layer are oriented ina random manner in the liquid crystal layer 4908 to cause a differencebetween the refractive index of the polymer and the refractive index ofthe liquid crystal molecule, so that incident light is scattered by theliquid crystal particles. Therefore, since polarized incident light isscattered by the liquid crystal layer 4908 even when the polarizingplate 4952 is provided, light is passed through the polarizing plate4952 and is emitted to the viewer side at a certain rate. Consequently,light display is viewed on the viewer side. In addition, the liquidcrystal layer 4908 is made to be opaque and clouded, which prevents areduction in visibility, such as glare even when a surface of the firstelectrode layer 4930 which has light-reflecting properties is a mirrorplane.

On the other hand, when a voltage is applied between the first electrodelayer 4930 and the second electrode layer 4931 (the case also called anON state), an electric field is formed in the liquid crystal layer 4908to arrange liquid crystal molecules in the liquid crystal particles inthe direction of the electric field, so that the refractive index of thepolymer almost coincides with the refractive index in the short axis ofthe liquid crystal molecules, and incident light thus transmits throughthe liquid crystal layer 4908 without being scattered by the liquidcrystal particles. Therefore, the polarization of the incident light iscontrolled by the retardation plate 4951 and the polarizing plate 4952;in the case where a quarter-wave plate (λ/4 plate) is used as theretardation plate 4951, incident light is passed twice through thepolarizing plate 4952 and the retardation plate 4951 before emission tothe viewer side, which generates a phase change by ½ wave. Consequently,the incident light is absorbed in the polarizing plate 4952 at the timeof emission, so that dark display is viewed on the viewer side.

The size of a storage capacitor provided in the liquid crystal displaydevice is set considering the leakage current of the transistor providedin the pixel portion or the like so that charge can be retained for apredetermined period. In the case where the transistor including thehigh purity oxide semiconductor film is provided, it is enough toprovide a storage capacitor having a capacitance that is ⅓ or less,preferably ⅕ or less of a liquid crystal capacitance of each pixel.

The shift register used in this embodiment enables display scan signals(ON signals or OFF signals) to be output at the same timing in a batchto a plurality of scan signal lines in the case of display with singlecolor (e.g., all black or all white), which enables the data writingperiod to be decreased. Further, a period during which a scan signalline driver portion stops operating can be provided after a batchdisplay, so that power consumption of the scan signal line driverportion can be reduced by the period. Further, high-speed operation canbe realized, which enables a load on a driver circuit portion to bereduced, so that a flicker on the screen can be prevented.

For the liquid crystal display device, a twisted nematic (TN) mode, anin-plane-switching (IPS) mode, a fringe field switching (FFS) mode, anaxially symmetric aligned micro-cell (ASM) mode, an optical compensatedbirefringence (OCB) mode, a ferroelectric liquid crystal (FLC) mode, anantiferroelectric liquid crystal (AFLC) mode, or the like can be used.

A normally black liquid crystal display device such as a transmissiveliquid crystal display device utilizing a vertical alignment (VA) modemay be formed. The vertical alignment mode is a method of controllingalignment of liquid crystal molecules of a liquid crystal display panel,in which liquid crystal molecules are aligned perpendicularly to a panelsurface when no voltage is applied. Some examples are given as thevertical alignment mode; for example, an MVA (multi-domain verticalalignment) mode, a PVA (patterned vertical alignment) mode, an ASV mode,or the like can be employed. Moreover, it is possible to use a methodcalled domain multiplication or multi-domain design, in which a pixel isdivided into some regions (subpixels) and molecules are aligned indifferent directions in their respective regions.

In the display device, a black matrix (a light-blocking layer), anoptical member (an optical substrate) such as a polarizing member, aretardation member, or an anti-reflection member, and the like areprovided as appropriate. For example, circular polarization may beprovided with a polarizing substrate and a retardation substrate. Inaddition, a backlight, a side light, or the like may be used as a lightsource.

It is possible to employ a time-division display method (also called afield-sequential driving method) with the use of a plurality oflight-emitting diodes (LEDs) as a backlight. A field-sequential drivingmethod enables color display without using a color filter.

As a display method in the pixel portion, a progressive method, aninterlace method, or the like can be employed. Further, color elementscontrolled in a pixel at the time of color display are not limited tothree colors: R, G, and B (R, G, and B correspond to red, greed, andblue, respectively). For example, R, G, B, and W (W corresponds towhite); R, G, B, and one or more of yellow, cyan, magenta, and the like;or the like can be used. Further, the sizes of display regions may bedifferent between respective dots of color elements. An embodiment ofthe present invention is not limited to a display device for colordisplay but can also be applied to a display device for monochromedisplay.

Alternatively, as the display element included in the display device, alight-emitting element utilizing electroluminescence can be used.Light-emitting elements utilizing electroluminescence are classifiedaccording to whether a light-emitting material is an organic compound oran inorganic compound. In general, the former is referred to as anorganic EL element, and the latter is referred to as an inorganic ELelement.

In an organic EL element, by application of voltage to a light-emittingelement, electrons and holes are separately injected from a pair ofelectrodes into a layer containing a light-emitting organic compound,and current flows. The carriers (electrons and holes) are recombined,and thus, the light-emitting organic compound is excited. Thelight-emitting organic compound returns to the ground state from theexcited state, thereby emitting light. Owing to such a mechanism, thislight-emitting element is referred to as a current-excitationlight-emitting element.

The inorganic EL elements are classified according to their elementstructures into a dispersion-type inorganic EL element and a thin-filminorganic EL element. A dispersion-type inorganic EL element has alight-emitting layer where particles of a light-emitting material aredispersed in a binder, and its light emission mechanism isdonor-acceptor recombination type light emission that utilizes a donorlevel and an acceptor level. A thin-film inorganic EL element has astructure where a light-emitting layer is sandwiched between dielectriclayers, which is further sandwiched between electrodes, and its lightemission mechanism is localized type light emission that utilizesinner-shell electron transition of metal ions. Description in thisembodiment is made using an organic EL element as a light-emittingelement.

In order to extract light emitted from the light-emitting element, atleast one of a pair of electrodes is transparent. A transistor and alight-emitting element are formed over a substrate. A light-emittingelement having the following structure can be applied to thelight-emitting element: a top emission structure in which light isextracted through the surface opposite to a substrate; a bottom emissionstructure in which light is extracted through the surface on a substrateside; or a dual emission structure in which light is extracted throughthe surface opposite to a substrate and the surface on the substrateside.

FIG. 12 illustrates an example of a light-emitting device using alight-emitting element as a display element. A light-emitting element4513 which is a display element is electrically connected to thetransistor 4010 provided in the pixel portion 4002. A structure of thelight-emitting element 4513 is not limited to the stacked-layerstructure including the first electrode layer 4030, anelectroluminescent layer 4511, and the second electrode layer 4031,which is illustrated in FIG. 12. The structure of the light-emittingelement 4513 can be changed as appropriate depending on a direction inwhich light is extracted from the light-emitting element 4513, or thelike.

A partition wall 4510 can be formed using an organic insulating materialor an inorganic insulating material. It is particularly preferable thatthe partition wall 4510 be formed using a photosensitive resin materialto have an opening over the first electrode layer 4030 so that asidewall of the opening has a tilted surface with continuous curvature.

The electroluminescent layer 4511 may be formed using a single layer ora plurality of layers stacked.

A protective film may be formed over the second electrode layer 4031 andthe partition wall 4510 in order to prevent entry of oxygen, hydrogen,moisture, carbon dioxide, or the like into the light-emitting element4513. As the protective film, a silicon nitride film, a silicon nitrideoxide film, a DLC film, or the like can be formed. In addition, in aspace which is formed with the first substrate 4001, the secondsubstrate 4006, and the sealant 4005, a filler 4514 is provided forsealing. It is preferable that a panel be packaged (sealed) with aprotective film (such as a laminate film or an ultraviolet curable resinfilm) or a cover material with high air-tightness and littledegasification so that the panel is not exposed to the outside air, inthis manner.

As the filler 4514, an ultraviolet curable resin or a thermosettingresin can be used as well as an inert gas such as nitrogen or argon;polyvinyl chloride (PVC), acrylic, polyimide, epoxy resin, siliconeresin, polyvinyl butyral (PVB), or ethylene vinyl acetate (EVA) can beused. For example, nitrogen is used as the filler.

In addition, if needed, an optical film such as a polarizing plate, acircularly polarizing plate (including an elliptically polarizingplate), a retardation plate (a quarter-wave plate or a half-wave plate),or a color filter, may be provided as appropriate on a light-emittingsurface of the light-emitting element. Further, the polarizing plate orthe circularly polarizing plate may be provided with an anti-reflectionfilm. For example, anti-glare treatment by which reflected light can bediffused by roughness on the surface so as to reduce the glare can beperformed.

Further, an electronic paper in which electronic ink is driven can beprovided as the display device. The electronic paper is also called anelectrophoretic display device (electrophoretic display) and hasadvantages in that it exhibits the same level of readability as regularpaper, it has less power consumption than other display devices, and itcan thin and light in weight.

An electrophoretic display device can have various modes, and includes aplurality of microcapsules dispersed in a solvent or a solute, eachincluding first particles which are positively charged and secondparticles which are negatively charged. By applying an electric field tothe microcapsules, the particles in the microcapsules move in oppositedirections to each other and display with the color of the particlesgathering on one side is performed. The first particles and the secondparticles each contain pigment and do not move without an electricfield. Moreover, the first particles and the second particles havedifferent colors (either one of which may be colorless).

Thus, an electrophoretic display device is a display device thatutilizes a so-called dielectrophoretic effect by which a substancehaving a high dielectric constant moves to a high-electric field region.

A solution in which the above plurality of microcapsules is dispersed ina solvent is referred to as electronic ink. This electronic ink can beprinted on a surface of glass, plastic, cloth, paper, or the like.Furthermore, with a color filter or particles that have a pigment, colordisplay can also be performed.

The first particles and the second particles in the microcapsules mayeach be formed using a single material selected from a conductivematerial, an insulating material, a semiconductor material, a magneticmaterial, a liquid crystal material, a ferroelectric material, anelectroluminescent material, an electrochromic material, and amagnetophoretic material, or a composite material of any of these.

As the electronic paper, a display device using a twisting ball displaysystem can be used. According to the twisting ball display system,spherical particles each colored in black and white are arranged betweena first electrode layer and a second electrode layer which are electrodelayers used for a display element, and a potential difference isgenerated between the first electrode layer and the second electrodelayer to control the orientation of the spherical particles, so thatdisplay is performed.

FIG. 13 illustrates active matrix electronic paper as one embodiment ofa semiconductor device. The electronic paper in FIG. 13 is an example ofa display device using a twisting ball display system.

Between the first electrode layer 4030 connected to the transistor 4010and the second electrode layer 4031 provided for the second substrate4006, spherical particles 4613 each of which includes a black region4615 a, a white region 4615 b, and a cavity 4612 which is filled withliquid around the black region 4615 a and the white region 4615 b, areprovided. A space around the spherical particles 4613 is filled with afiller 4614 such as a resin. The second electrode layer 4031 correspondsto a common electrode (counter electrode). The second electrode layer4031 is electrically connected to a common potential line.

In FIGS. 11 to 13, a flexible substrate as well as a glass substrate canbe used as any of the first substrate 4001 and the second substrate4006; a light-transmitting plastic substrate or the like can be used,for example. As the plastic substrate, a fiberglass-reinforced plastics(FRP) plate, a polyvinyl fluoride (PVF) film, a polyester film, or anacrylic resin film can be used. A sheet with a structure in which analuminum foil is sandwiched between PVF films or polyester films can beused as well.

The insulating film 4020 can be formed using an inorganic insulatingmaterial such as silicon oxide, silicon oxynitride, hafnium oxide,aluminum oxide, or gallium oxide. A manufacturing method of theinsulating film 4020 is not particularly limited; for example, a filmformation method such as a plasma CVD method or a sputtering method canbe used. A sputtering method is preferable in terms of low possibilityof entry of hydrogen, water, and the like.

The insulating film 4024 can be formed to have a single-layer structureor a stacked-layer structure using one or more of a silicon nitridefilm, a silicon nitride oxide film, an aluminum oxide film, an aluminumnitride film, an aluminum oxynitride film, and an aluminum nitride oxidefilm by a sputtering method. The insulating film 4024 functions as aprotective film of a transistor.

The insulating layer 4021 can be formed using an inorganic insulatingmaterial or an organic insulating material. It is preferable that theinsulating layer 4021 be formed using a heat-resistant organicinsulating material such as an acrylic resin, polyimide, abenzocyclobutene-based resin, polyamide, or an epoxy resin, as aplanarizing insulating film. Other than such an organic insulatingmaterial, it is possible to use a low-dielectric constant material (alow-k material), a siloxane-based resin, phosphosilicate glass (PSG),borophosphosilicate glass (BPSG), or the like. A plurality of insulatingfilms formed using these materials may be stacked to form the insulatinglayer.

There is no particular limitation on the method for forming theinsulating layer 4021; a sputtering method, a spin coating method, adipping method, spray coating, a droplet discharge method (e.g., aninkjet method, screen printing, or offset printing), roll coating,curtain coating, knife coating, or the like can be used depending on amaterial of the insulating layer 4021.

The display device displays an image by transmitting light from a lightsource or a display element. Therefore, the substrate and the thin filmssuch as the insulating film and the conductive film provided for thepixel portion where light is transmitted have light-transmittingproperties with respect to light in the visible-light wavelength range.

The first electrode layer and the second electrode layer (also called apixel electrode layer, a common electrode layer, a counter electrodelayer, or the like) for applying voltage to the display element eachhave light-transmitting properties or light-reflecting properties, whichdepends on the direction in which light is extracted, the position wherethe electrode layer is provided, the pattern structure of the electrodelayer, and the like.

The first electrode layer 4030 and the second electrode layer 4031 canbe formed using a light-transmitting conductive material such as indiumoxide containing tungsten oxide, indium zinc oxide containing tungstenoxide, indium oxide containing titanium oxide, indium tin oxidecontaining titanium oxide, indium tin oxide (hereinafter referred to asITO), indium zinc oxide, or indium tin oxide to which silicon oxide isadded.

The first electrode layer 4030 and the second electrode layer 4031 canalso be formed using one or more kinds of materials selected from metalssuch as tungsten (W), molybdenum (Mo), zirconium (Zr), hafnium (Hf),vanadium (V), niobium (Nb), tantalum (Ta), chromium (Cr), cobalt (Co),nickel (Ni), titanium (Ti), platinum (Pt), aluminum (Al), copper (Cu),and silver (Ag); alloys of these metals; and nitrides of these metals.

Since transistors are easily broken owing to static electricity or thelike, a protective circuit for protecting a driver circuit is preferablyprovided. The protection circuit is preferably formed using a nonlinearelement.

The shift register descried in any of Embodiments 1 and 2 can be appliedas described above, display scan signals (ON signals or OFF signals) canbe output at the same timing in a batch to a plurality of scan signallines in the case of display with single color (e.g., all black or allwhite), which enables the data writing period to be decreased. Further,a period during which a scan signal line driver portion stops operatingcan be provided after a batch display, so that power consumption of thescan signal line driver portion can be reduced by the period. Further,high-speed operation can be realized, which enables a load on a drivercircuit portion to be reduced, so that a flicker on the screen can beprevented.

Embodiment 5 can be implemented in appropriate combination with anyother structure described in the other embodiments.

Embodiment 6

A liquid crystal display device disclosed in this specification can beapplied to a variety of electronic devices (including game machines).Examples of electronic devices are a television set (also referred to asa television or a television receiver), a monitor of a computer or thelike, a camera such as a digital camera or a digital video camera, adigital photo frame, a mobile phone handset (also referred to as amobile phone or a mobile phone device), a portable game console, aportable information terminal, an audio reproducing device, alarge-sized game machine such as a pachinko machine, and the like.

FIG. 15A illustrates an example of a television set. In a television set9600, a display portion 9603 is incorporated in a housing 9601. Imagescan be displayed on the display portion 9603. In this example, thehousing 9601 is supported by a stand 9605.

The television set 9600 can be operated with an operation switch of thehousing 9601 or a separate remote controller 9610. Channels and volumecan be controlled with an operation key 9609 of the remote controller9610 so that an image displayed on the display portion 9603 can becontrolled. The remote controller 9610 may be provided with a displayportion 9607 for displaying data output from the remote controller 9610.

The television set 9600 is provided with a receiver, a modem, and thelike. With the use of the receiver, general television broadcasting canbe received. Moreover, a communication network can be connected with orwithout wires via the modem, so that one-way (from a sender to areceiver) or two-way (between a sender and a receiver or betweenreceivers) data communication can be performed.

FIG. 15B illustrates an example of a digital photo frame. For example,in a digital photo frame 9700, a display portion 9703 is incorporated ina housing 9701. A variety of images can be displayed on the displayportion 9703. For example, the display portion 9703 can display data ofan image taken with a digital camera or the like can be displayed on thedisplay portion 9703, whereby the digital photo frame 9700 can befunctioned as a normal photo frame.

The digital photo frame 9700 is provided with an operation portion, anexternal connection portion (a USB terminal, a terminal that can beconnected to various cables such as a USB cable, or the like), arecording medium insertion portion, and the like. Although thesecomponents may be provided on the surface on which the display portionis provided, it is preferable to provide on the side surface or the backsurface for the design of the digital photo frame 9700. For example, amemory in which image data taken with a digital camera is stored isinserted in the recording medium insertion portion of the digital photoframe 9700, whereby the image data can be displayed on the displayportion 9703.

The digital photo frame 9700 may be configured to transmit and receivedata wirelessly. The structure may be employed in which image data istaken in wirelessly to be displayed.

FIG. 16A is a portable amusement machine and includes two housings, ahousing 9881 and a housing 9891, which are connected with a jointportion 9893 so that the portable amusement machine can be opened orfolded. A display portion 9882 and a display portion 9883 areincorporated in the housing 9881 and the housing 9891, respectively. Inaddition, the portable amusement machine illustrated in FIG. 16A is alsoprovided for a speaker portion 9884, a recording medium insertionportion 9886, an LED lamp 9890, an input means (an operation key) 9885,a connection terminal 9887, a sensor 9888 (a sensor for measuring force,displacement, position, speed, acceleration, angular velocity,rotational frequency, distance, light, liquid, magnetism, temperature,chemical substance, sound, time, hardness, electric field, current,voltage, electric power, radiation, flow rate, humidity, gradient,oscillation, odor, or infrared rays), a microphone 9889, or the like.Needless to say, the structure of the portable amusement machine is notlimited to the above, and may be any structure which is provided with atleast a liquid crystal display device disclosed in this specification.In addition, another accessory may be provided as appropriate. Theportable amusement machine illustrated in FIG. 16A is equipped with afunction of reading a program or data stored in a recording medium todisplay on the display portion, and/or a function of sharing informationwith another portable amusement machine by wireless communication. Theportable amusement machine illustrated in FIG. 16A can have variousfunctions without limitation to the above.

FIG. 16B illustrates an example of a slot machine which is a large-sizedamusement machine. In a slot machine 9900, a display portion 9903 isincorporated in a housing 9901. In addition, the slot machine 9900 isprovided with an operation means such as a start lever or a stop switch,a coin slot, a speaker, and the like. Needless to say, the structure ofthe slot machine 9900 is not limited to the above, and may be anystructure which is provided with at least a liquid crystal displaydevice disclosed in this specification. In addition, another accessorymay be provided as appropriate.

FIG. 17A illustrates an example of a mobile phone. A mobile phone 1000is provided with a display portion 1002 incorporated in a housing 1001,an operation button 1003, an external connection port 1004, a speaker1005, a microphone 1006, and the like.

The display portion 1002 of the mobile phone 1000 illustrated in FIG.17A can be touched with a finger or the like, whereby data can be inputto the mobile phone 1000. Users can make a call or text messaging bytouching the display portion 1002 with their fingers or the like.

There are mainly three screen modes of the display portion 1002. Thefirst mode is a display mode mainly for displaying images. The secondmode is an input mode mainly for inputting data such as text. The thirdmode is a display-and-input mode in which two modes of the display modeand the input mode are combined.

For example, in the case of making a call or composing a mail, a textinput mode mainly for inputting text is selected for the display portion1002 so that text displayed on the screen can be input. In that case, itis preferable to display a keyboard or number buttons on almost all areaof the screen of the display portion 1002.

Further, a detection device having a sensor for detecting inclination,such as a gyroscope or an acceleration sensor, can be provided insidethe mobile phone 1000, so that the installation direction of the mobilephone 1000 (whether the mobile phone 1000 is placed horizontally orvertically for a landscape mode or a portrait mode) can be determined toautomatically switch display on the screen of the display portion 1002.

The screen modes are switched by touching the display portion 1002 oroperating the operation button 1003 of the housing 1001. The screenmodes may be switched depending on the kind of an image displayed on thedisplay portion 1002. For example, when a signal of an image displayedon the display portion is a signal of moving image data, the screen modeis switched to the display mode; when the signal is a signal of textdata, the screen mode is switched to the input mode.

Further, in the input mode, when input with a touch to the displayportion 1002 is not performed for a certain period while a signaldetected by the optical sensor in the display portion 1002 is detected,the screen mode may be controlled so as to be switched from the inputmode to the display mode.

The display portion 1002 may function as an image sensor. For example,an image of a palm print, a fingerprint, or the like is taken bytouching the display portion 1002 with the palm or the finger, wherebypersonal authentication can be performed. Further, by providing abacklight or a sensing light source which emits near-infrared light inthe display portion 1002, an image of a finger vein, a palm vein, or thelike can be taken.

FIG. 17B also illustrates an example of a mobile phone. A mobile phonein FIG. 17B has a display device 9410 provided for a housing 9411, whichincludes a display portion 9412 and operation buttons 9413, and acommunication device 9400 provided for a housing 9401, which includesoperation buttons 9402, an external input terminal 9403, a microphone9404, a speaker 9405, and a light-emitting portion 9406 that emits lightwhen a phone call is received. The display device 9410 having a displayfunction can be detached from and attached to the communication device9400 which has a telephone function in two directions indicated byarrows. Therefore, respective short axes of the display device 9410 andthe communication device 9400 can be connected to each other;alternatively, respective long axes of the display device 9410 and thecommunication device 9400 can be connected to each other. In addition,when only the display function is used, the display device 9410 can bedetached from the communication device 9400 and used alone. Images orinput data can be transmitted and received by wireless or wirecommunication between the communication device 9400 and the displaydevice 9410, each of which has a rechargeable battery.

EXPLANATION OF REFERENCE

10: pulse output circuit; 11: signal line; 12: signal line; 13: signalline; 14: signal line; 21: input terminal; 22: input terminal; 23: inputterminal; 24: input terminal; 25: output terminal; 26: input terminal;27: output terminal; 31: power source line; 32: power source line; 33:power source line; 34: power source line; 35: power source line; 36:power source line; 37: power source line; 38: power source line; 51:period; 52: period; 53: period; 54: period; 55: period; 60: controlportion; 70: output portion; 100: transistor; 101: transistor; 102:transistor; 103: transistor; 104: transistor; 105: transistor; 106:transistor; 107: transistor; 108: transistor; 109: transistor; 110:transistor; 111: transistor; 400: substrate; 401: gate electrode layer;402: gate insulating layer; 403: oxide semiconductor layer; 407:insulating film; 409: protective insulating layer; 410: transistor; 420:transistor; 427: insulating layer; 430: transistor; 437: insulatinglayer; 440: transistor; 505: substrate; 506: protective insulatinglayer; 507: gate insulating layer; 510: transistor; 511: gate electrodelayer; 516: insulating layer; 530: oxide semiconductor film; 531: oxidesemiconductor layer; 1000: mobile phone; 1001: housing; 1002: displayportion; 1003: operation button; 1004: external connection port; 1005:speaker portion; 1006: microphone; 4001: substrate; 4002: pixel portion;4003: signal line driver circuit; 4004: scan line driver circuit; 4005:sealant; 4006: substrate; 4008: liquid crystal layer; 4010: transistor;4011: transistor; 4013: liquid crystal element; 4015: connectionterminal electrode; 4016: terminal electrode; 4018: FPC; 4019:anisotropic conductive film; 4020: insulating film; 4021: insulatinglayer; 4023: insulating film; 4024: insulating film; 4030: electrodelayer; 4031: electrode layer; 4032: insulating film; 405 a: sourceelectrode layer; 405 b: drain electrode layer; 436 a: wiring layer; 436b: wiring layer; 4510: partition wall; 4511: electroluminescence layer;4513: light-emitting element; 4514: sealant; 4612: cavity; 4613:spherical particle; 4614: sealant; 4908: liquid crystal layer; 4930:electrode layer; 4931: electrode layer; 4951: retardation plate; 4952:polarizing plate; 515 a: source electrode layer; 515 b: drain electrodelayer; 9400: communication device; 9401: housing; 9402: operationbutton; 9403: external input terminal; 9404: microphone; 9405: speakerportion; 9406: light-emitting portion; 9410: display device; 9411:housing; 9412: display portion; 9413: operation button; 9600: televisionset; 9601: housing; 9603: display portion; 9605: stand; 9607: displayportion; 9609: operation key; 9610: remote controller; 9700: digitalphoto frame; 9701: housing; 9703: display portion; 9881: housing; 9882:display portion; 9883: display portion; 9884: speaker portion; 9885:input means (operation key); 9886: recording medium insertion portion;9887: connection terminal; 9888: sensor; 9889: microphone; 9890: LEDlamp; 9891: housing; 9893: joint portion; 9900: slot machine; 9901:housing; 9903: display portion; 4018 a: FPC; 4018 b: FPC; 4615 a: blackregion; 4615 b: white region

This application is based on Japanese Patent Application serial no.2010-117615 filed with Japan Patent Office on May 21, 2010, the entirecontents of which are hereby incorporated by reference.

The invention claimed is:
 1. A semiconductor device comprising: a firsttransistor, a second transistor, a third transistor, a fourthtransistor, a fifth transistor, a sixth transistor, a seventhtransistor, an eighth transistor, a ninth transistor, a tenthtransistor, and an eleventh transistor, wherein one of a source and adrain of the first transistor is electrically connected to one of asource and a drain of the second transistor and a first wiring, whereinone of a source and a drain of the third transistor is electricallyconnected to one of a source and a drain of the fourth transistor and asecond wiring, wherein one of a source and a drain of the fifthtransistor is electrically connected to one of a source and a drain ofthe sixth transistor, wherein one of a source and a drain of the eighthtransistor is electrically connected to one of a source and a drain ofthe ninth transistor, wherein one of a source and a drain of the tenthtransistor is electrically connected to one of a source and a drain ofthe eleventh transistor, wherein the other of the source and the drainof the first transistor is electrically connected to the other of thesource and the drain of the third transistor and a third wiring, whereinthe other of the source and the drain of the second transistor iselectrically connected to the other of the source and the drain of thesixth transistor, the other of the source and the drain of the eleventhtransistor, and a fourth wiring, wherein the other of the source and thedrain of the fourth transistor is electrically connected to a fifthwiring, wherein the other of the source and the drain of the fifthtransistor is electrically connected to a sixth wiring, wherein a gateof the first transistor is electrically connected to a gate of the thirdtransistor and one of a source and a drain of the seventh transistor,wherein the gate of the first transistor is electrically connected tothe one of the source and the drain of the fifth transistor and the oneof the source and the drain of the sixth transistor, wherein a gate ofthe second transistor is electrically connected to a gate of the fourthtransistor, the one of the source and the drain of the tenth transistor,and the one of the source and the drain of the eleventh transistor, andwherein a gate of the fifth transistor is electrically connected to agate of the eleventh transistor.
 2. The semiconductor device accordingto claim 1, wherein the first transistor, the second transistor, thethird transistor, the fourth transistor, the fifth transistor, the sixthtransistor, the seventh transistor, the eighth transistor, the ninthtransistor, the tenth transistor, and the eleventh transistor have thesame conductivity type.
 3. The semiconductor device according to claim1, wherein a high-potential drive voltage is supplied to the other ofthe source and the drain of the eighth transistor and the other of thesource and the drain of the tenth transistor.
 4. A semiconductor devicecomprising: a first transistor, a second transistor, a third transistor,a fourth transistor, a fifth transistor, a sixth transistor, a seventhtransistor, an eighth transistor, a ninth transistor, a tenthtransistor, and an eleventh transistor, wherein one of a source and adrain of the first transistor is electrically connected to one of asource and a drain of the second transistor and a first wiring, whereinone of a source and a drain of the third transistor is electricallyconnected to one of a source and a drain of the fourth transistor and asecond wiring, wherein one of a source and a drain of the fifthtransistor is electrically connected to one of a source and a drain ofthe sixth transistor, wherein one of a source and a drain of the eighthtransistor is electrically connected to one of a source and a drain ofthe ninth transistor, wherein one of a source and a drain of the tenthtransistor is electrically connected to one of a source and a drain ofthe eleventh transistor, wherein the other of the source and the drainof the first transistor is electrically connected to the other of thesource and the drain of the third transistor and a third wiring, whereinthe other of the source and the drain of the second transistor iselectrically connected to the other of the source and the drain of thesixth transistor, the other of the source and the drain of the eleventhtransistor, and a fourth wiring, wherein the other of the source and thedrain of the fourth transistor is electrically connected to a fifthwiring, wherein the other of the source and the drain of the fifthtransistor is electrically connected to a sixth wiring, wherein a gateof the first transistor is electrically connected to a gate of the thirdtransistor and one of a source and a drain of the seventh transistor,wherein the gate of the first transistor is electrically connected tothe one of the source and the drain of the fifth transistor and the oneof the source and the drain of the sixth transistor, wherein a gate ofthe second transistor is electrically connected to a gate of the fourthtransistor, the one of the source and the drain of the tenth transistor,and the one of the source and the drain of the eleventh transistor,wherein a gate of the fifth transistor is electrically connected to agate of the eleventh transistor, wherein a clock signal is supplied tothe third wiring, wherein a first low-potential drive voltage issupplied to the fourth wiring, wherein a second low-potential drivevoltage is supplied to the fifth wiring, and wherein a high-potentialdrive voltage is supplied to the sixth wiring.
 5. The semiconductordevice according to claim 4, wherein the first transistor, the secondtransistor, the third transistor, the fourth transistor, the fifthtransistor, the sixth transistor, the seventh transistor, the eighthtransistor, the ninth transistor, the tenth transistor, and the eleventhtransistor have the same conductivity type.
 6. The semiconductor deviceaccording to claim 4, wherein the high-potential drive voltage issupplied to the other of the source and the drain of the eighthtransistor and the other of the source and the drain of the tenthtransistor.